Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Jarek Dabrowski"'
Autor:
Jarek Dabrowski, Hans-joachim Mussig
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may
Autor:
A. Kruger, Jürgen Drews, D. Stolarek, Julia Kitzmann, Jarek Dabrowski, F. Coccetti, K. Schulz, Jens Katzer, Sebastian Schulze, P. Kulse, Mirko Fraschke, O. Fursenko, André Wolff, M. Lukosius, M. Lisker, A.M. Schubert, G. Dziallas, Ioan Costina, Andreas Mai, D. Wolansky
Publikováno v:
Microelectronic Engineering. 205:44-52
We present insights into processes of cleaning, patterning, encapsulation, and contacting graphene in a 200 mm wafer pilot line routinely used for the fabrication of integrated circuits in Si technologies. We demonstrate key process steps and discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef682f720e5ce3461de341d73abd802
https://doi.org/10.1016/j.mee.2018.11.007
https://doi.org/10.1016/j.mee.2018.11.007
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P707-P710
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b44bfd38a99808ee9b2f56e77b284e2
https://doi.org/10.1149/2.0031812jss
https://doi.org/10.1149/2.0031812jss
Publikováno v:
Journal of Crystal Growth. 468:424-432
Formation energies of vacancy clusters V n with (1≤n≤11) in crystalline Si and of their complexes V n O m (1≤m≤14) with oxygen were computed by ab initio density functional theory (DFT) within the generalized gradient approximation (GGA) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee979b55db2210e9e0433a3db0846fb
https://doi.org/10.1016/j.jcrysgro.2016.10.073
https://doi.org/10.1016/j.jcrysgro.2016.10.073
Publikováno v:
Journal of Applied Physics. 128:045310
Growth of high-quality graphene on germanium is to date only reported at growth temperatures near the substrate melting point. Direct integration of graphene growth into technological processes would, however, require a significantly lower growth tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::058b54f6825fbbc64e51ef7ee8765713
https://doi.org/10.1063/5.0003234
https://doi.org/10.1063/5.0003234
Autor:
Peter Zaumseil, Malgorzata Sowinska, Thomas Schroeder, Jordi Suñé, Damian Walczyk, Andrei Gloskovskii, Christian Walczyk, Xavier Cartoixà, P. Calka, T. Bertaud, Jarek Dabrowski
Publikováno v:
ACS applied materials & interfaces 6(7), 5056-5060 (2014). doi:10.1021/am500137y
The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fe8ea789f9b6656929197dd2119daac
https://doi.org/10.1021/am500137y
https://doi.org/10.1021/am500137y
Autor:
Yuji Yamamoto, Julia Kitzmann, Sebastian Schulze, Gunther Lippert, Andreas Mai, Grzegorz Lupina, Mindaugas Lukosius, H. M. Krause, Fatima Akhtar, Thomas Schroeder, Marco Lisker, André Wolff, O. Fursenko, M. A. Schubert, Jarek Dabrowski
Publikováno v:
ACS applied materialsinterfaces. 8(49)
Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH4 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca9ce17e806574f544e267c03e65fbc
https://pubmed.ncbi.nlm.nih.gov/27960421
https://pubmed.ncbi.nlm.nih.gov/27960421
Publikováno v:
Journal of Applied Physics. 126:085306
Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b21a2749df8abeee7780ebef5a9e0d
https://doi.org/10.1063/1.5108774
https://doi.org/10.1063/1.5108774
Autor:
Grzegorz Lupina, Mikael Östling, Anderson D. Smith, Max C. Lemme, Gunther Lippert, Sam Vaziri, Christoph Henkel, Jarek Dabrowski, Wolfgang Mehr
Publikováno v:
Nano Letters
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adefb0701f01923c12f62a246e19acf4
https://doi.org/10.1021/nl304305x
https://doi.org/10.1021/nl304305x
Autor:
Grzegorz Lupina, Gunther Lippert, Felix Herziger, Yuji Yamamoto, Jarek Dabrowski, Janina Maultzsch, Max C. Lemme, Wolfgang Mehr
Publikováno v:
Carbon
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000 °C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f16963243a6ab7bd3db978027f42acfa
https://doi.org/10.1016/j.carbon.2012.09.001
https://doi.org/10.1016/j.carbon.2012.09.001