Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Jarek Antoszewski"'
Publikováno v:
Electro-optical and Infrared Systems: Technology and Applications XIX.
Autor:
Wenwu Pan, Gilberto Umana-Membreno, Jarek Antoszewski, Wen Lei, Renjie Gu, Hemendra Kala, Nima Dehdashtiakhavan, Lorenzo Faraone
Publikováno v:
Electro-optical and Infrared Systems: Technology and Applications XIX.
Autor:
Nils B. Refvik, David N. Purschke, Wenwu Pan, Charles E. Jensen, Howe R. J. Simpson, Wen Lei, Renjie Gu, Jarek Antoszewski, Gilberto A. Umana-Membreno, Lorenzo Faraone, Frank A. Hegmann
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Autor:
Nima Dehdashti Akhavan, Lorenzo Faraone, Renjie Gu, Jarek Antoszewski, Gilberto A. Umana-Membreno
Publikováno v:
Journal of Electronic Materials. 48:6159-6168
In this paper, a systematic study of interdiffusion in (112)B oriented HgTe/CdTe superlattice (SL) structures has been undertaken in order to investigate the viability of employing SL as the absorber layer for very long wavelength infrared (VLWIR, 15
Autor:
Nima DehdashtiAkhavan, Gilberto Antonio Umana-Membreno, Renjie Gu, Jarek Antoszewski, Lorenzo Faraone, Sorin Cristoloveanu
Publikováno v:
Solid-State Electronics. 193:108283
Autor:
Nima Dehdashti Akhavan, Gilberto A. Umana-Membreno, Sorin Cristoloveanu, Jarek Antoszewski, Lorenzo Faraone
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
This work presents results of a study of electronic transport in state-of-the-art SOI transistors. Geometrical magnetoresistance measurements, performed at magnetic field intensities up to 15 T, and high-resolution mobility spectrum analysis were emp
Autor:
Michael C. B. Ashley, Orsola De Marco, Simon Ellis, Eran O. Ofek, Alexander Heger, Kenneth C. Freeman, M. Hankins, R. M. Lau, A. Babul, Tony Travouillon, Anna M. Moore, Stuart D. Ryder, Jacob E. Jencson, Alexandre Delacroix, Roberto Soria, Daniel L. McKenna, Jarek Antoszewski, David Hale, Antony Galla, Jennifer L. Sokoloski, Roger Smith, Robert A. Simcoe, J. Soon, Mansi M. Kasliwal, Hadrien A. R. Devillepoix, David Adams, Kaushik De, Joss Bland-Hawthorn, Scott M. Adams, Jeff Cooke
There have been a dramatic increase in the number of optical and radio transient surveys due to astronomical transients such as gravitational waves and gamma ray bursts, however, there have been a limited number of wide-field infrared surveys due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1c13a7fc66c50904811df0b6fb1cd69
https://resolver.caltech.edu/CaltechAUTHORS:20200110-085304573
https://resolver.caltech.edu/CaltechAUTHORS:20200110-085304573
Autor:
Nima Dehdashti Akhavan, Gilberto A. Umana-Membreno, Lorenzo Faraone, Jarek Antoszewski, Renjie Gu
Publikováno v:
IEEE Transactions on Electron Devices. 65:4340-4345
A method is described whereby the valence band (VB) discontinuity that is present in mercury cadmium telluride (HgCdTe)-based alloy-barrier nBn detectors can be minimized. It is numerically demonstrated that compositionally graded layers can provide
Publikováno v:
Materials Chemistry and Physics. 214:285-290
CdTe epitaxial layers were grown by MBE on GaSb (211)B substrates from two different suppliers in order to determine the influence of as-received substrate quality on the material quality of subsequently-grown CdTe epilayers. It is observed that GaSb
Autor:
Renjie Gu, Gilberto A. Umana-Membreno, Nima Dehdashti Akhavan, Jarek Antoszewski, Lorenzo Faraone
Publikováno v:
IEEE Transactions on Electron Devices. 65:591-598
Unipolar nBn photodetector structures have recently emerged as a viable alternative to the traditional p-n junction infrared photodiode approach. However, realization of a unipolar nBn detector technology using the mercury–cadmium–telluride (HgCd