Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jared C. Helton"'
Autor:
Blake W. Nelson, Andrew N. Lemmon, Brian T. DeBoi, Md Maksudul Hossain, H. Alan Mantooth, Christopher D. New, Jared C. Helton
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 499-512 (2020)
Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead
Externí odkaz:
https://doaj.org/article/2ac63d65e626426c965920f659654420
Publikováno v:
IEEE Transactions on Power Electronics. 38:4647-4657
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb3d89a6c3372565c5c8d953a09f93e
https://doi.org/10.1109/tpel.2022.3225756
https://doi.org/10.1109/tpel.2022.3225756
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
Silicon carbide (SiC) technology continues to improve, which has led to SiC MOSFETs capable of operating at medium voltage (MV) levels greater than 1.7 kV. These devices are currently being evaluated for use in next-generation MV power electronics. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7886fe585ef0370a457c09f219a9d292
https://doi.org/10.1109/apec42165.2021.9487269
https://doi.org/10.1109/apec42165.2021.9487269
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
Continuous improvements in silicon carbide (SiC) technology has led to the development of medium-voltage (MV) SiC MOSFETs that support significantly higher edge rates and operating frequencies than those supported by MV silicon technology. Before the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aeeb7bc04e7660eedb85a4d91d6c3ec
https://doi.org/10.1109/ecce44975.2020.9236357
https://doi.org/10.1109/ecce44975.2020.9236357