Zobrazeno 1 - 10
of 372
pro vyhledávání: '"Jarašiūnas, K."'
Publikováno v:
In Optics and Laser Technology February 2021 134
Autor:
Wang, Hsiang-Chen, Yeh, Chun-Ming, Tang, Tsung-Yi, Yang, C. C., Malinauskas, T., Jarasiunas, K.
Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the l
Externí odkaz:
http://arxiv.org/abs/1001.1792
Autor:
Nomeika, K., Aleksiejūnas, R., Miasojedovas, S., Tomašiūnas, R., Jarašiūnas, K., Pietzonka, I., Strassburg, M., Lugauer, H.-J.
Publikováno v:
In Journal of Luminescence August 2017 188:301-306
Publikováno v:
In Diamond & Related Materials August 2015 57:9-16
Publikováno v:
In Thin Solid Films 2010 519(2):863-867
Autor:
Wang, Hsiang-Chen, Feng, Shih-Wei, Malinauskas, T., Jarasiunas, K., Ting, Chu-Chi, Liu, Sean, Tsai, Chin-Yi
Publikováno v:
In Thin Solid Films 2010 518(24):7291-7294
Autor:
Aleksiejunas, R., Kadys, A., Malinauskas, T., Neimontas, K., Gudelis, V., Jarasiunas, K., Fochuk, P., Feychuk, P.
Publikováno v:
In Optical Materials January 2008 30(5):780-782
Autor:
Malinauskas, T., Aleksiejūnas, R., Jarašiūnas, K., Beaumont, B., Gibart, P., Kakanakova-Georgieva, A., Janzen, E., Gogova, D., Monemar, B., Heuken, M.
Publikováno v:
In Journal of Crystal Growth 2007 300(1):223-227
Publikováno v:
In Materials Science in Semiconductor Processing 2006 9(1):390-393
Autor:
Monemar, B., Paskov, P.P., Bergman, J.P., Paskova, T., Hemmingsson, C., Malinauskas, T., Jarasiunas, K., Gibart, P., Beaumont, B.
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 376:482-485