Zobrazeno 1 - 10
of 242
pro vyhledávání: '"Jaouen H"'
Publikováno v:
Phys. Rev. B 79, 245201 (2009)
We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is abl
Externí odkaz:
http://arxiv.org/abs/0902.0491
A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet
Externí odkaz:
http://arxiv.org/abs/0808.3951
The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the Local-Density-Approximati
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607510
Autor:
Zaka, A., Singer, J., Dornel, E., Garetto, D., Rideau, D., Rafhay, Q., Clerc, R., Manceau, J.-P., Degors, N., Boccaccio, C., Tavernier, C., Jaouen, H.
Publikováno v:
In Solid State Electronics 2011 63(1):158-162
Publikováno v:
In Thin Solid Films 2010 518(9):2437-2441
Publikováno v:
In Solid State Electronics 2009 53(4):452-461
Autor:
Marcelot, O., Claverie, A., Cristiano, F., Cayrel, F., Alquier, D., Lerch, W., Paul, S., Rubin, L., Jaouen, H., Armand, C.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B April 2007 257(1-2):249-252
Publikováno v:
Journal of Applied Physics; 9/1/1986, Vol. 60 Issue 5, p1699, 6p
Autor:
RIDEAU, D., MONSIEUR, F., NIER, O., NIQUET, Y., LACORD, J., QUENETTE, V., MUGNY, G., HIBLOT, G., GOUGET, G., QUOIRIN, M., SILVESTRI, L., NALLET, F., TAVERNIER, C., JAOUEN, H.
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2014, Yokohama, France. pp.101-104
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2014, Yokohama, France. pp.101-104
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5c85426b1d32fc34897b9ddcbecec49a
https://hal.archives-ouvertes.fr/hal-02138853
https://hal.archives-ouvertes.fr/hal-02138853
Autor:
Garetto, D., Zaka, A., Quenette, V., Rideau, D., Dornel, E., F. Clark, W., Minondo, M., Tavernier, C., Rafhay, Q., Clerc, R., Schmid, A., Leblebici, Y., Jaouen, H.
Publikováno v:
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009)
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::05e825227a46593dd725abcba334f015
https://hal.archives-ouvertes.fr/hal-00604191
https://hal.archives-ouvertes.fr/hal-00604191