Zobrazeno 1 - 10
of 1 606
pro vyhledávání: '"Janzén E"'
Autor:
Plo, J., Pershin, A., Li, S., Poirier, T., Janzen, E., Schutte, H., Tian, M., Wynn, M., Bernard, S., Rousseau, A., Ibanez, A., Valvin, P., Desrat, W., Michel, T., Jacques, V., Gil, B., Kaminska, A., Wan, N., Edgar, J. H., Gali, A., Cassabois, G.
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the b
Externí odkaz:
http://arxiv.org/abs/2405.20837
Autor:
Clua-Provost, T., Mu, Z., Durand, A., Schrader, C., Happacher, J., Bocquel, J., Maletinsky, P., Fraunié, J., Marie, X., Robert, C., Seine, G., Janzen, E., Edgar, J. H., Gil, B., Cassabois, G., Jacques, V.
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understandin
Externí odkaz:
http://arxiv.org/abs/2404.14155
Autor:
Abou-Hamdan, L., Schmitt, A., Bretel, R., Rossetti, S., Tharrault, M., Mele, D., Pierret, A., Rosticher, M., Taniguchi, T., Watanabe, K., Maestre, C., Journet, C., Toury, B., Garnier, V., Steyer, P., Edgar, J. H., Janzen, E., Berroir, J-M., Fève, G., Ménard, G., Plaçais, B., Voisin, C., Hugonin, J-P., Bailly, E., Vest, B., Greffet, J-J., Bouchon, P., De Wilde, Y., Baudin, E.
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devic
Externí odkaz:
http://arxiv.org/abs/2310.08351
Autor:
Clua-Provost, T., Durand, A., Mu, Z., Rastoin, T., Fraunié, J., Janzen, E., Schutte, H., Edgar, J. H., Seine, G., Claverie, A., Marie, X., Robert, C., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Phys. Rev. Lett. 131, 126901 (2023)
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplif
Externí odkaz:
http://arxiv.org/abs/2307.06774
Autor:
Janzen, E., Schutte, H., Plo, J., Rousseau, A., Michel, T., Desrat, W., Valvin, P., Jacques, V., Cassabois, G., Gil, B., Edgar, J. H.
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the chang
Externí odkaz:
http://arxiv.org/abs/2306.13358
Autor:
Sun, P. Z., Xiong, W. Q., Bera, A., Timokhin, I., Wu, Z. F., Mishchenko, A., Sellers, M. C., Liu, B. L., Cheng, H. M., Janzen, E., Edgar, J. H., Grigorieva, I. V., Yuan, S. J., Geim, A. K.
Publikováno v:
Proc. Natl Acad. Sci. 120, e2300481120 (2023)
Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect
Externí odkaz:
http://arxiv.org/abs/2303.08001
Autor:
Bylinkin, A., Calavalle, F., Barra-Burillo, M., Kirtaev, R. V., Nikulina, E., Modin, E. B., Janzen, E., Edgar, J. H., Casanova, F., Hueso, L. E., Volkov, V. S., Vavassori, P., Aharonovich, I., Alonso-Gonzalez, P., Hillenbrand, R., Nikitin, A. Y.
Strong coupling (SC) between light and matter excitations such as excitons and molecular vibrations bear intriguing potential for controlling chemical reactivity, conductivity or photoluminescence. So far, SC has been typically achieved either betwee
Externí odkaz:
http://arxiv.org/abs/2302.14814
Publikováno v:
In Journal of Luminescence November 2024 275
Autor:
Schubert, M., Korlacki, R., Knight, S., Hofmann, T., Schöche, S., Darakchieva, V., Janzén, E., Monemar, B., Gogova, D., Thieu, Q. -T., Togashi, R., Murakami, H., Kumagai, Y., Goto, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M.
Publikováno v:
Phys. Rev. B 93, 125209 (1-18) (2016)
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $\beta$-Ga$_2
Externí odkaz:
http://arxiv.org/abs/1512.08590
Autor:
Schöche, S., Hofmann, T., Nilsson, D., Kakanakova-Georgieva, A., Janzên, E., Kühne, P., Lorenz, K., Schubert, M., Darakchieva, V.
The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measu
Externí odkaz:
http://arxiv.org/abs/1512.01427