Zobrazeno 1 - 10
of 484
pro vyhledávání: '"Janzén, Erik"'
Autor:
Kakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik
Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kin
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91731
Autor:
Christle, David J., Klimov, Paul V., Casas, Charles F. de las, Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Hassan, Jawad ul, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Nguyen T., Janzén, Erik, Gali, Ádám, Awschalom, David D.
Publikováno v:
Phys. Rev. X 7, 021046 (2017)
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanis
Externí odkaz:
http://arxiv.org/abs/1702.07330
Autor:
Radulaski, Marina, Widmann, Matthias, Niethammer, Matthias, Zhang, Jingyuan Linda, Lee, Sang-Yun, Rendler, Torsten, Lagoudakis, Konstantinos G., Son, Nguyen Tien, Janzén, Erik, Ohshima, Takeshi, Wrachtrup, Jörg, Vučković, Jelena
Publikováno v:
Nano Letters 17 (3), 1782-1786 (2017)
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy cente
Externí odkaz:
http://arxiv.org/abs/1612.02874
Autor:
Koehl, William F., Diler, Berk, Whiteley, Samuel J., Bourassa, Alexandre, Son, N. T., Janzén, Erik, Awschalom, David D.
Publikováno v:
Phys. Rev. B 95, 035207 (2017)
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can
Externí odkaz:
http://arxiv.org/abs/1608.08255
Autor:
Niethammer, Matthias, Widmann, Matthias, Lee, Sang-Yun, Stenberg, Pontus, Kordina, Olof, Ohshima, Takeshi, Son, Nguyen Tien, Janzén, Erik, Wrachtrup, Jörg
Publikováno v:
Phys. Rev. Applied 6, 034001 (2016)
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve opti
Externí odkaz:
http://arxiv.org/abs/1606.01301
Autor:
Ivády, Viktor, Szász, Krisztián, Falk, Abram L., Klimov, Paul V., Christle, David J., Janzén, Erik, Abrikosov, Igor A., Awschalom, David D., Gali, Adam
Publikováno v:
Phys. Rev. B 92, 115206 (2015)
Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the fi
Externí odkaz:
http://arxiv.org/abs/1505.05651
Autor:
Widmann, Matthias, Lee, Sang-Yun, Rendler, Torsten, Son, Nguyen Tien, Fedder, Helmut, Paik, Seoyoung, Yang, Li-Ping, Zhao, Nan, Yang, Sen, Booker, Ian, Denisenko, Andrej, Jamali, Mohammad, Momenzadeh, Seyed Ali, Gerhardt, Ilja, Ohshima, Takeshi, Gali, Adam, Janzén, Erik, Wrachtrup, Jörg
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient sp
Externí odkaz:
http://arxiv.org/abs/1407.0180
Autor:
Christle, David J., Falk, Abram L., Andrich, Paolo, Klimov, Paul V., Hassan, Jawad ul, Son, Nguyen T., Janzén, Erik, Ohshima, Takeshi, Awschalom, David D.
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are inc
Externí odkaz:
http://arxiv.org/abs/1406.7325
Autor:
Ivády, Viktor, Armiento, Rickard, Szász, Krisztián, Janzén, Erik, Gali, Adam, Abrikosov, Igor A.
We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical ju
Externí odkaz:
http://arxiv.org/abs/1406.2944
The negatively charged nitrogen-vacancy defect ($N-V^-$ center) in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the ability to opt
Externí odkaz:
http://arxiv.org/abs/0903.4078