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pro vyhledávání: '"Janz, S"'
Autor:
Weiss, C., Schnabel, M., Prucnal, S., Hofmann, J., Reichert, A., Fehrenbach, T., Skorupa, W., Janz, S.
Publikováno v:
Journal of Applied Physics, vol. 120, p. 105103, 2016
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an ab
Externí odkaz:
http://arxiv.org/abs/2005.07406
Publikováno v:
Applied Surface Science, vol. 351, p. 550-557, 2015
The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and
Externí odkaz:
http://arxiv.org/abs/2005.07378
Autor:
Weiss, C., Park, S., Lefèvre, J., Boizot, B., Mohr, C., Cavani, O., Picard, S., Kurstjens, R., Niewelt, T., Janz, S.
Publikováno v:
Solar Energy Materials and Solar Cells, vol. 209, p. 110430, 2020
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (${\tau}_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (${\mu}$W-PCD) method
Externí odkaz:
http://arxiv.org/abs/2005.07366
Publikováno v:
In Journal of Crystal Growth 15 January 2023 602
Autor:
Ferrera, M., Duchesne, D., Razzari, L., Peccianti, M., Morandotti, R., Cheben, P., Janz, S., Xu, D. -X., Little, B. E., Chu, S., Moss, D. J.
Publikováno v:
Optics Express Vol. 17, Issue 16, pp. 14098-14103 (2009)
We demonstrate efficient, low power, continuous-wave four-wave mixing in the C-band, using a high index doped silica glass micro ring resonator having a Q-factor of 1.2 million. A record high conversion efficiency for this kind of device is achieved
Externí odkaz:
http://arxiv.org/abs/1711.04400
Publikováno v:
Optics Express 18, (4) 3905-3910 (2010)
We demonstrate all-optical demultiplexing at 160 Gigabits per second in the C-band, based on nonlinear optics using four-wave mixing (FWM) in a silicon nanowire. We achieve error-free operation with a penalty of ~ 3.9dB.
Comment: 6 pages, 5 figu
Comment: 6 pages, 5 figu
Externí odkaz:
http://arxiv.org/abs/1705.00776
Publikováno v:
Optics Express Volume 19, issue (23) 22410-22416 (2011)
We demonstrate all-optical wavelength conversion at 10 Gb/s for differential phase-shift keyed (DPSK) data signals in the C-band, based on four-wave mixing (FWM) in a silicon ring resonator. Error-free operation with a system penalty of ~ 4.1 dB at 1
Externí odkaz:
http://arxiv.org/abs/1505.03240
Autor:
Li, F., Vo, T. D., Husko, C., Pelusi, M., Xu, D-X., Densmore, A., Ma, R., Janz, S., Eggleton, B. J., Moss, David J.
Publikováno v:
Optics Express Volume 19 Issue 21 pages 20364 to 20371 (2011)
We demonstrate an all-optical XOR logic function for 40Gb/s differential phase-shift keyed (DPSK) data signals in the C-band, based on four-wave mixing (FWM) in a silicon nanowire. Error-free operation with a system penalty of ~ 3.0dB and ~ 4.3dB at
Externí odkaz:
http://arxiv.org/abs/1505.03222
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Akademický článek
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