Výsledky vyhledávání - "Janusz J. Nowak"

Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory

Autor: Philip L. Trouilloud, Gen P. Lauer, Kothandaraman Chandrasekharan, Janusz J. Nowak, S. L. Brown, Pouya Hashemi, Thitima Suwannasiri, Qing He, Hyun Koo Lee, Houssameddine Dimitri, Daniel C. Worledge, Jung-Hoon Bak, Matthias Georg Gottwald, Juhyun Kim, Guohan Hu, Jonathan Z. Sun

Publikováno v: IEEE Magnetics Letters. 10:1-4

We report reliable 5 ns switching of spin-transfer torque magnetoresistive random-access memory devices of nominal size 43 nm and a resistance area product of 11 Ω·µm2. We measured 256 devices with a 100% write-error-rate (WER) yield at a WER floo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a57a37d0324ddfb7d90502fa579f8f2
https://doi.org/10.1109/lmag.2019.2928243

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Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node

Autor: C. P. D'Emic, S. L. Brown, E. R. J. Edwards, Gen P. Lauer, Janusz J. Nowak, Jung-hyeon Kim, Hyung-Suk Jung, Thitima Suwannasiri, Guohan Hu, Daniel C. Worledge, Matthias Georg Gottwald, Seonghoon Woo, Pouya Hashemi, Jonathan Z. Sun, Philip L. Trouilloud

Publikováno v: 2020 IEEE International Electron Devices Meeting (IEDM).

We demonstrate spin-transfer torque magnetoresistive random access memory (STT-MRAM) arrays achieving 2.8e-10 write error rate (WER) performance at 3 ns write duration at a magnetic tunnel junction (MTJ) diameter of 40 nm. The bit-to-bit distribution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56b426f67520001c3df4a08e7e4a1c51
https://doi.org/10.1109/iedm13553.2020.9371985

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Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications

Publikováno v: 2019 IEEE International Electron Devices Meeting (IEDM).

We report for the first time reliable 2 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 254 devices with tight distribution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c43b40d632495c6eb788e9abf23377f
https://doi.org/10.1109/iedm19573.2019.8993604

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Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

Autor: Jeong-Heon Park, Janusz J. Nowak, Philip L. Trouilloud, Eugene J. O Sullivan, Raman Kothandaraman, R. P. Robertazzi, Young-Hyun Kim, Jonathan Z. Sun, J.W. Lee, Gen P. Lauer, Guohan Hu, Anthony J. Annunziata, Daniel C. Worledge

Publikováno v: IEEE Magnetics Letters. 7:1-4

The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::efae9c4204806aed6fef55ecd2fe98e4
https://doi.org/10.1109/lmag.2016.2539256

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Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

Publikováno v: 2017 IEEE International Electron Devices Meeting (IEDM).

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Perf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b2664742d6137f57c18fd3fb422fa7f0
https://doi.org/10.1109/iedm.2017.8268515

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Low-current Spin Transfer Torque MRAM

Publikováno v: VLSI-DAT

To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials paramet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ed0003d41cfd237ea02d2fc6f76517
https://doi.org/10.1109/vlsi-tsa.2017.7942445

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(Invited) Recent Developments in ST-MRAM, Including Scaling

Autor: M. Gajek, Eugene J. O'Sullivan, R. P. Robertazzi, Guohan Hu, Jonathan Z. Sun, D. W. Abraham, Daniel C. Worledge, Janusz J. Nowak, Michael C. Gaidis, Stephen L. Brown, P. L. Trouilloud, William J. Gallagher

Publikováno v: ECS Transactions. 58:117-125

Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent develop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbc85c67d0c389200aff348075a2198d
https://doi.org/10.1149/05805.0117ecst

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