Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Jansen, P G M"'
Autor:
Samuely, P., Szabó, P., Kačmarčík, J., Meerchaut, A., Cario, L., Jansen, A. G. M., Cren, T., Kuzmiak, M., Šofranko, O., Samuely, T.
Publikováno v:
Physical Review B, Vol. 104, 224507 (2021)
Extreme in-plane upper critical magnetic fields $B_{c2//ab}$ strongly violating the Pauli paramagnetic limit have been observed in the misfit layer $(LaSe)_{1.14}(NbSe_2)$ and $(LaSe)_{1.14}(NbSe_2)_2$ single crystals with $T_c$ = 1.23 K and 5.7 K, r
Externí odkaz:
http://arxiv.org/abs/2107.07302
Autor:
Guevel, L. Le, Billiot, G., De Franceschi, S., Morel, A., Jehl, X., Jansen, A. G. M., Pillonnet, G.
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMO
Externí odkaz:
http://arxiv.org/abs/2102.04364
Autor:
Bohuslavskyi, H., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($\tau_
Externí odkaz:
http://arxiv.org/abs/1903.06021
Autor:
Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.
Publikováno v:
IEEE Electron Device Letters, 5 March 2019
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) =
Externí odkaz:
http://arxiv.org/abs/1903.05409
Autor:
Huder, L., Artaud, A., Quang, T. Le, de Laissardière, G. Trambly, Jansen, A. G. M., Lapertot, G., Chapelier, C., Renard, V. T.
Publikováno v:
Phys. Rev. Lett. 120, 156405 (2018)
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculat
Externí odkaz:
http://arxiv.org/abs/1803.03505
Publikováno v:
Physica B, 204, 83 (1995)
For metallic point contacts with Be and Al the magnetoquantum oscillations in the contact resistance have been investigated as a function of the applied voltage over the contact. For one set of point contacts the oscillation amplitude is found to var
Externí odkaz:
http://arxiv.org/abs/1705.06254
Autor:
Quang, T. Le, Huder, L., Bregolin, F. Lipp, Artaud, A., Okuno, H., Pouget, S., Mollard, N., Lapertot, G., Jansen, A. G. M, Lefloch, F., Driessen, E. F. C, Chapelier, C., Renard, V. T.
Publikováno v:
Carbon 121, 48 (2017)
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts bu
Externí odkaz:
http://arxiv.org/abs/1705.08257
Publikováno v:
Phys. Rev. B, 48, 13904 (1993)
The conductance curves of point-contact tunnel junctions between Ag and $\rm Ba_{1-x}K_xBiO_3$ ($x\simeq 0.4$) reveal a BCS behavior with low leakage current at zero voltage and some broadening of the superconducting-gap structure. In the energy rang
Externí odkaz:
http://arxiv.org/abs/1704.00283
Publikováno v:
Eur. Phys. J. B 10, 475 (1999)
The influence of electric felds and currents has been investigated in the high-$T_c$ superconductors $YBaCuO$ and $BiSrCaCuO$ using a point-contact geometry with $Ag$ as the counterelectrode, which reveal switching transitions between states of a dif
Externí odkaz:
http://arxiv.org/abs/1701.06039
Publikováno v:
Physica B, 218, 42(1996)
The amplitude of magnetoresistance quantum oscillations of Al and Be point contacts in a magnetic field parallel to the contact axis has been studied as a function of voltage applied over the contact. It was found that for one group of contacts the o
Externí odkaz:
http://arxiv.org/abs/1601.00165