Neutron and proton irradiation for latchup suppression in a radiation-tolerant commercial submicron CMOS process.

Autor: Lacoe, R.C., Moss, S.C., Osborn, J.V., Janousek, B.K., LaLumondiere, S.D., Brown, S., Mayer, D.C.

Publikováno v: 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471); 2000, p340-345, 6p

Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons.

Autor: Rosenbluth, M., Bloss, W.L., Yamada, W.E., Janousek, B.K.

Publikováno v: IEEE Transactions on Nuclear Science; 1991, Vol. 38 Issue 1, p20-24, 5p

Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons.

Autor: Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.

Publikováno v: IEEE Transactions on Nuclear Science; 1989, Vol. 36 Issue 6, p2223-2228, 6p

Characteristics of GaAs MESFET inverters exposed to high energy neutrons.

Autor: Bloss, W.L., Yamada, W.E., Young, A.M., Janousek, B.K.

Publikováno v: IEEE Transactions on Nuclear Science; 1988, Vol. 35 Issue 5, p1074-1079, 6p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.