Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Janmejaya Pradhan"'
Autor:
Janmejaya Pradhan, Manohar Singh
The operation of a distance relay is a function of source impedance and fault parameters. The performance of a distance relay is quite stable when used for the protection of a strong power system network where the fault current contribution is domina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca7b2cb4c2c827f4429e97be0710c36
https://doi.org/10.21203/rs.3.rs-1552568/v1
https://doi.org/10.21203/rs.3.rs-1552568/v1
Autor:
S. R. Pattanaik, Janmejaya Pradhan
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83430d9f1ef9c5b731a24669ef9d33eb
http://www.intechopen.com/articles/show/title/impatt-diodes-based-on-gaas-for-millimeter-wave-applications-with-reference-to-si
http://www.intechopen.com/articles/show/title/impatt-diodes-based-on-gaas-for-millimeter-wave-applications-with-reference-to-si
Autor:
Janmejaya Pradhan, Manohar Singh
Publikováno v:
2020 21st National Power Systems Conference (NPSC).
The communication schemes-based distance protection is more reliable for line protection. These protection schemes are fast in fault clearance and provide a secure protection whenever the zone-based distance protection mal-operate. The available comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f44a6f409990d367022739e816169de
https://doi.org/10.1109/npsc49263.2020.9331884
https://doi.org/10.1109/npsc49263.2020.9331884
Publikováno v:
CSEE Journal of Power and Energy Systems. 3:365-379
Among different sources of alternate energy, wind and solar are two prominent and promising alternatives to meet the future electricity needs for mankind. Generally, these sources are integrated at the distribution utilities to supply the local distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501f7c2d9458d84f3a5dab42e455a5fe
https://doi.org/10.17775/cseejpes.2017.00030
https://doi.org/10.17775/cseejpes.2017.00030
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
The terahertz properties of a Double Drift Region (DDR) heterostructure IMPATT diode, based on GaN/A1GaN, are simulated for operation around 0.5 THz. The device DC to RF conversion efficiency of 17.1% and a noise measure of 21 dB, expected from the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa23db9193608bdf8d69c77f047bf2eb
https://doi.org/10.1007/978-3-319-97604-4_44
https://doi.org/10.1007/978-3-319-97604-4_44
Publikováno v:
2017 7th International Conference on Power Systems (ICPS).
Reactive power is an essential component for the smooth flow of the apparent power in the power networks. Generators are prime source for reactive power generation, to meet the network reactive power demand of network and load. This result in excessi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3908e56dcb869270129c166faf651ed3
https://doi.org/10.1109/icpes.2017.8387358
https://doi.org/10.1109/icpes.2017.8387358
Publikováno v:
Journal of Semiconductors. 38:064003
Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode. We have performed a sensitivity analysis of the millimeter wave characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e68b7f06746e24c007c40e32b21887
https://doi.org/10.1088/1674-4926/38/6/064003
https://doi.org/10.1088/1674-4926/38/6/064003
Publikováno v:
2007 International Workshop on Physics of Semiconductor Devices.
Summary form only given. The mm-wave as well as noise properties of IMPATT diode at D-band are efficiently determined with 4H-SiC and GaN as base materials. The results show that SiC IMPATT diode is capable of generating high microwave power at 140 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e647330c30eb644e50bdbf13edf2d7b
https://doi.org/10.1109/iwpsd.2007.4472529
https://doi.org/10.1109/iwpsd.2007.4472529