Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Janis J. Merkel"'
Autor:
Takashi Itoh, Janis J. Merkel, Petr Klapetek, Andrea Mašková, Christiane Becker, Linwei Yu, Peter Pikna, Soumyadeep Misra, Jiří Vyskočil, Aliaksei Vetushka, Martin Ledinský, Matěj Hývl, Jan Kočka, Aleš Marek, Antonín Fejfar, Pere Roca i Cabarrocas, Zdeňka Hájková, Martin Foldyna
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2015, 135, ⟨10.1016/j.solmat.2014.10.027⟩
Solar Energy Materials and Solar Cells, 2015, 135, ⟨10.1016/j.solmat.2014.10.027⟩
ResearcherID
Solar Energy Materials and Solar Cells, Elsevier, 2015, 135, ⟨10.1016/j.solmat.2014.10.027⟩
Solar Energy Materials and Solar Cells, 2015, 135, ⟨10.1016/j.solmat.2014.10.027⟩
ResearcherID
Radial junction solar cells with only ~100 nm thin amorphous Si absorber layer deposited on Si nanowires can be prepared by a relatively simple and low-cost thin film technology. Metal assisted Si nanowire growth leads to a disorder in nanowire orien
Autor:
Daniel Lockau, Paul Plocica, Jan Haschke, Janis J. Merkel, S. Steffens, Lisa Jogschies, Tobias Sontheimer, Christiane Becker, Carola Klimm, Bernd Rech, Daniel Amkreutz, Veit Preidel
Publikováno v:
Solar Energy Materials and Solar Cells. 119:112-123
The present article gives a summary of recent technological and scientific developments in the field of polycrystalline silicon (poly-Si) thin-film solar cells on foreign substrates. Cost-effective fabrication methods and cheap substrate materials ma
Publikováno v:
Journal of Crystal Growth
Electron-beam evaporation (EBE) of silicon permits the high-rate deposition of photovoltaic thin-film devices at low costs. The directional, non-conformal growth characteristic of EBE is systematically investigated by varying the silicon flux angle o