Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Janire Escolar"'
Autor:
Freddie Withers, Darren Nutting, Kristian Sommer Thygesen, Takashi Taniguchi, Janire Escolar, Alireza Taghizadeh, Kenji Watanabe, Namphung Peimyoo, Saverio Russo, Monica F. Craciun, Thorsten Deilmann
Publikováno v:
Peimyoo, N, Deilmann, T, Withers, F, Escolar, J, Nutting, D, Taniguchi, T, Watanabe, K, Taghizadeh, A, Craciun, M F, Thygesen, K S & Russo, S 2021, ' Electrical tuning of optically active interlayer excitons in bilayer MoS 2 ', Nature Nanotechnology, vol. 16, no. 8, pp. 888-893 . https://doi.org/10.1038/s41565-021-00916-1
Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c8eecd385db9e91d10a5871cce7acf2
https://doi.org/10.1038/s41565-021-00916-1
https://doi.org/10.1038/s41565-021-00916-1
Autor:
Monica F. Craciun, Janire Escolar, Namphung Peimyoo, Adolfo De Sanctis, Anders C. Riis-Jensen, Saverio Russo, Frank Vollmer, Hsin-Yu Wu, Freddie Withers, Gabi Prando, Kristian Sommer Thygesen
Publikováno v:
ACS applied materialsinterfaces. 12(49)
Tailoring of the band gap in semiconductors is essential for the development of novel devices. In standard semiconductors, this modulation is generally achieved through highly energetic ion implantation. In two-dimensional (2D) materials, the photoph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3bb52e5446bd35c7777bb9cb2e645cc
https://pubmed.ncbi.nlm.nih.gov/33232104
https://pubmed.ncbi.nlm.nih.gov/33232104
Autor:
Namphung, Peimyoo, Thorsten, Deilmann, Freddie, Withers, Janire, Escolar, Darren, Nutting, Takashi, Taniguchi, Kenji, Watanabe, Alireza, Taghizadeh, Monica Felicia, Craciun, Kristian Sommer, Thygesen, Saverio, Russo
Publikováno v:
Nature nanotechnology. 16(8)
Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::041c78d3b904386e0147964adf6186b0
https://pubmed.ncbi.nlm.nih.gov/34083771
https://pubmed.ncbi.nlm.nih.gov/34083771
Autor:
Namphung Peimyoo, Janire Escolar, Henry A. Fernandez, Matthew D. Barnes, Monica F. Craciun, Saverio Russo, Freddie Withers
Publikováno v:
Physical Review B. 100
We demonstrate anisotropic tunnel magnetoconductance by controllably engineering charging islands in the layered semiconducting ferromagnet ${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$. This is achieved by assembling vertical van der Waals h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1b1252cc75542d3c296218bdd43e28
https://doi.org/10.1103/physrevb.100.054420
https://doi.org/10.1103/physrevb.100.054420
Autor:
Sarah J. Haigh, Adolfo De Sanctis, Konstantinos Anastasiou, A. P. Rooney, Janire Escolar, Saverio Russo, Monica F. Craciun, Namphung Peimyoo, Ali Gholina, Matthew D. Barnes, Iddo Amit, Jake D. Mehew, Freddie Withers
Publikováno v:
DRC
Scaling improvements in conventional semiconductor devices have been facilitated by incorporating high-k dielectric materials such as Hf0 2 [1]. This has led to increased device density and lower drive voltages. Similarly, the rapid technological pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb9e89003d44cdc72f1e83de8260b090
https://doi.org/10.1109/drc.2018.8442164
https://doi.org/10.1109/drc.2018.8442164