Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Janice Mazzola"'
Autor:
Rachael M. Ward, David Null, Swapna Sunkari, Paul B. Klein, Kok Keong Lew, David C. Sheridan, Evan R. Glaser, Jie Zhang, Janice Mazzola, D. Kurt Gaskill, Michael S. Mazzola, Volodymyr Bondarenko, Igor Sankin, G. J. Stewart
Publikováno v:
Materials Science Forum. :103-106
Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has been obtained, even for epi thickness of 38 µm. Comprehensive characterization techniques conducted on the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9052e4b2371c49bbb388c5a566ed0a80
https://doi.org/10.4028/www.scientific.net/msf.600-603.103
https://doi.org/10.4028/www.scientific.net/msf.600-603.103
Autor:
Michael S. Mazzola, Igor Sankin, Esteban Romano, Janice Mazzola, Jie Zhang, Carl Hoff, Swapna Sunkari
Publikováno v:
Materials Science Forum. :101-104
In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d9d1048520482290e6e127bcbcbed5
https://doi.org/10.4028/www.scientific.net/msf.556-557.101
https://doi.org/10.4028/www.scientific.net/msf.556-557.101
Autor:
Janna R. B. Casady, Jeff B. Casady, Jie Zhang, Esteban Romano, Michael S. Mazzola, Carl Hoff, C. Rivas, Kevin Matocha, Janice Mazzola
Publikováno v:
Materials Science Forum. :195-198
This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a80dee65e3c32b01916ae9e2a25b78
https://doi.org/10.4028/www.scientific.net/msf.527-529.195
https://doi.org/10.4028/www.scientific.net/msf.527-529.195
Publikováno v:
Materials Science Forum. :77-80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::616f527f2561daecbc3e8be4b386da4b
https://doi.org/10.4028/www.scientific.net/msf.483-485.77
https://doi.org/10.4028/www.scientific.net/msf.483-485.77
Autor:
Yaroslav Koshka, Jie Zhang, Hrishikesh Das, Swapna Sunkari, Janice Mazzola, Michael S. Mazzola, Jeffery L. Wyatt, Galyna Melnychuck
Publikováno v:
Materials Science Forum. :397-400
Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac065d1398f5832e183fc946a7425f88
https://doi.org/10.4028/www.scientific.net/msf.483-485.397
https://doi.org/10.4028/www.scientific.net/msf.483-485.397
Publikováno v:
Journal of Electronic Materials. 34:320-323
Room-temperature Fourier transform infrared reflection (FTIR) spectroscopy was carried out on heavily and lightly doped 4H-SiC films grown by chemical vapor deposition on conducting, n-type (nitrogen) doped substrates. A model-based curve fit of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7baa38047709a849a1f18ddebff10d
https://doi.org/10.1007/s11664-005-0103-8
https://doi.org/10.1007/s11664-005-0103-8
Autor:
Janice Mazzola, Jeff B. Casady, Janna R. B. Casady, Yaroslav Koshka, Lin Cheng, V. Bondarenko
Publikováno v:
Materials Science Forum. :885-888
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0c0a7c3899d9ea9a0ffb6b90aeb5fd
https://doi.org/10.4028/www.scientific.net/msf.457-460.885
https://doi.org/10.4028/www.scientific.net/msf.457-460.885
Autor:
Janna R. B. Casady, Michael S. Mazzola, Janice Mazzola, Paul B. Klein, Swapna Sunkari, Becky Tyrrell, Jie Zhang, Robert E. Stahlbush, G. J. Stewart, J. D. Caldwell
Publikováno v:
MRS Proceedings. 1069
Epitaxial growth on 3-in, 2° off-axis 4H SiC substrates has been conducted in a horizontal hot-wall CVD reactor with HCl addition. The thickness of the epiwafers ranges from 3m to 11 m and the growth rate is 7 − 7.5 m/h. Although a roughe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f25a75e7e69c2fc3cad2d452f3374e2
https://doi.org/10.1557/proc-1069-d07-10
https://doi.org/10.1557/proc-1069-d07-10
