Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Janghwan Cha"'
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 2960 (2021)
Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional on
Externí odkaz:
https://doaj.org/article/42b28eae3d894cc289f3b8e299f89ab8
Publikováno v:
Current Applied Physics. 28:13-18
Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y2C) is investigated as one prospective mat
Autor:
Suklyun Hong, Muhammad Farooq Khan, Jonghwa Eom, Keun Hong Min, Amir Muhammad Afzal, Hailiang Liu, Janghwan Cha, Byung Min Ko, Ghulam Dastgeer
Publikováno v:
ACS Applied Materials & Interfaces. 11:10959-10966
There have been a few studies of heterojunctions composed of two-dimensional transition-metal dichalcogenides (TMDs) and an oxide layer, but such studies of high-performance electric and optoelectronic devices are essential. Such heterojunctions with
Autor:
Hu Young Jeong, Seong Won Lee, Woong Huh, Gwan Hyoung Lee, Chul Ho Lee, Jong Chan Kim, Janghwan Cha, Suklyun Hong, Hong Gyu Park, Seunghoon Yang, Donghun Lee, Yoonseok Kim
Publikováno v:
Nano letters. 20(4)
In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexpl
Publikováno v:
Current Applied Physics. 18:1013-1019
Two dimensional (2D) semiconducting materials such as MoS2 have been actively investigated for their applications in nanodevices and gas sensors (or detectors). In this connection, we have investigated atomic and electronic structures of specific ads
Autor:
Kyung-Ah Min, Yongho Seo, Janghwan Cha, Jongwan Jung, Jonghwa Eom, Muhammad Arslan Shehzad, Suklyun Hong, Bilal Abbas Naqvi, M. Farooq Khan, Sajjad Hussain
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports
Scientific Reports
Black Phosphorus (BP) is an excellent material from the post graphene era due to its layer dependent band gap, high mobility and high Ion/Ioff. However, its poor stability in ambient poses a great challenge for its practical and long-term usage. The
Publikováno v:
Journal of the Korean Physical Society. 73:100-104
We have investigated binding properties between molecular adsorbates and transition metal dichalcogenide (TMD) such as MoS2, MoSe2, and MoTe2 using density functional theory (DFT) calculations with various van der Waals (vdW) functionals. It is found
Autor:
Janghwan Cha, Kyung-Ah Min, Jonghwa Eom, Ghulam Dastgeer, Ghazanfar Nazir, Yasir Jamil, Sikandar Aftab, Jongwan Jung, Amir Muhammad Afzal, Muhammad Farooq Khan, Suklyun Hong, Bilal Abbas Naqvi
Publikováno v:
ACS Applied Materials & Interfaces. 10:13150-13157
Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheet
Publikováno v:
Physical Chemistry Chemical Physics. 20:25240-25245
For utilization of two-dimensional (2D) materials as electronic devices, their mixed-dimensional heterostructures with three-dimensional (3D) materials are receiving much attention. In this study, we have investigated the atomic and electronic struct
Publikováno v:
Nanomaterials
Volume 11
Issue 11
Nanomaterials, Vol 11, Iss 2960, p 2960 (2021)
Volume 11
Issue 11
Nanomaterials, Vol 11, Iss 2960, p 2960 (2021)
Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional on