Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jang-Yong Bae"'
Autor:
Ju-Young Cho, Yuchul Hwang, Jang-Yong Bae, Byoung-Wook Woo, Jin-Sub Shin, Yong-Jin Park, Han-Wool Yeon, Young-Chang Joo, Seung-Min Lim, Min-Woo Jeong, Kyung-Tae Jang, Min-Gi Jin
Publikováno v:
Microelectronic Engineering. 156:97-102
We investigated the kinetics of the electromigration (EM) phenomenon regarding not only metal line materials (Al, W, Cu) but also multiple structures of the Cu metal line under various electric conditions: direct current (DC), alternating current (AC
Publikováno v:
Journal of the Microelectronics and Packaging Society. 21:111-115
Department of Device Solutions, Samsung Electronics, Gyeonggi-Do 443-742, Korea(2014년 11월 30일 접수: 2014년 12월 12일 수정: 2014년 12월 24일 게재확정 )초록:다마신 구리 배선에서의 동적인 전기장에 따른 절연체
Autor:
Ju-Young Cho, Han-Wool Ycon, Yuchul Hwang, Yong-Jin Park, Byoung-Wook Woo, Jang-Yong Bae, Jin-Sub Shin, Young-Chang Joo, Seung-Min Lim, Kyung-Tae Jang, Min-Woo Jeong
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
As the design rule for memory devices shrinks, the reliability issue of electromigration (EM) is emerged due 10 the increase of high current density, therefore, the reliability for memory devices can be limited by EM failure of metal lines (Al. Cu. W
Hygro-thermo-mechanical analysis and failure prediction in electronic packages by using peridynamics
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
This study presents an integrated approach for the simulation of hygro-thermo-vapor-deformation analysis of electronic packages by using peridynamics. This theory is suitable for such analysis because of its mathematical structure. Its governing equa
Autor:
Byung Lyul Park, Jong-min Baek, J.H. Jung, Jang-Yong Bae, G.H. Choi, G.J. Seong, H.B. Lee, Joo Tae Moon, Jang-Hee Lee, J.H. Son, Jae-joon Oh, S.Y. Lee, Sun-Rae Kim, Sang-rok Hah, Kihyun Choi, Hee-sook Park, U-In Chung, Jong Won Hong
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
This paper describes the development of Cu interconnect technology for memory devices. A highly reliable sub 50 nm Cu interconnect lines were successfully fabricated by using optimized iPVD barrier/seed and electroplating process. The resistivity of
Publikováno v:
Applied Physics Express. 8:031502
We investigated the effects of pulsed electric fields on dielectric breakdown in Cu damascene interconnects. Among the DC, unipolar, and bipolar pulse conditions that were examined, the dielectric lifetime was longest under the bipolar condition beca
Publikováno v:
ECS Meeting Abstracts. :2084-2084
not Available.
Publikováno v:
Applied Physics Express; Mar2015, Vol. 8 Issue 3, p1-1, 1p