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pro vyhledávání: '"Jang-Chen Hsieh"'
Autor:
Jang-Chen Hsieh, 謝建成
82
In recent, an implanted P+ polysilicon gated P-MOSFET becomes more popular in deep submicrometer technology. Conventionally, the higher diffusivity of boron ion degrades device performances easily. In our thesis,due to the effect of boron pen
In recent, an implanted P+ polysilicon gated P-MOSFET becomes more popular in deep submicrometer technology. Conventionally, the higher diffusivity of boron ion degrades device performances easily. In our thesis,due to the effect of boron pen
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97388202791307258326