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pro vyhledávání: '"Jang Jyegal"'
Autor:
Jang Jyegal
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105122-105122-11 (2019)
A generalized Einstein relation for electron gases of degenerate semiconductors with a system of typically two nonparabolic conduction band structures is derived and formulated in near-equilibrium condition based on using the semiclassical drift-diff
Externí odkaz:
https://doaj.org/article/85f9646c62244ddbaee71a2f3fa8d02e
Autor:
Jang Jyegal
Publikováno v:
AIP Advances, Vol 5, Iss 6, Pp 067118-067118-13 (2015)
Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity ove
Externí odkaz:
https://doaj.org/article/a453d514ddcc48928975ca6e0ddf9b58
Autor:
Jang Jyegal
Publikováno v:
Applied Sciences, Vol 7, Iss 8, p 773 (2017)
The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonparabolic energy bands produces physically improper results, as well as losing numerical accuracy for large values of nonparabolicity parameters at room
Externí odkaz:
https://doaj.org/article/9aeb1e7e43f046acaa40ec079ce653de