Zobrazeno 1 - 10 of 43 pro vyhledávání: '"Jang Han Kim"'
3
Awareness and Correlation of Patient Safety Culture and Standard Precautions among Health Care Personnel
Autor: Jae-sim Jeong, Jang-han Kim, Hye-kyung Kwon, Bok-im Lee
Publikováno v: Quality Improvement in Health Care. 21:58-72
Objectives: This study was conducted as descriptive correlation research in order to survey healthcare personnel(HCP)`s awareness of patient safety culture and their recognition of standard precautions, and to examine the correlation between the two
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d829780577624d2d78d229a27e1d52fb
https://doi.org/10.14371/qih.2015.21.2.58
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4
A Legal Framework for Improving Patient Safety in Korea
Autor: Jang Han Kim, Minsu Ock, Sang-Il Lee
Publikováno v: Health Policy and Management. 25:174-184
This paper reviewed structure and current status of laws related to patient safety using patient safety law matrix to promote systematic approach in legal system of patient safety. Laws related to patient safety can be divided into three areas: laws
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2156eb3b8067f041a550a9231a342eff
https://doi.org/10.4332/kjhpa.2015.25.3.174
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6
Improved Bipolar Resistive Switching Memory Characteristics in Ge0.5Se0.5 Solid Electrolyte by Using Dispersed Silver Nanocrystals on Bottom Electrode
Autor: Won-Ju Cho, Jang-Han Kim, Byoungchoo Park, Hong-Bay Chung, Ki-Hyun Nam, Inchan Hwang
Publikováno v: Journal of Nanoscience and Nanotechnology. 14:9498-9503
Resistive switching random-access memory (ReRAM) devices based on chalcogenide solid electrolytes have recently become a promising candidate for future low-power nanoscale nonvolatile memory application. The resistive switching mechanism of ReRAM is
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ee9cf4c112c127804adad179b7836a9
https://doi.org/10.1166/jnn.2014.10154
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8
Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment
Autor: Jang-Han Kim, Ki-Hyun Nam, Hong-Bay Chung
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:81-84
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a11701aca3a6c47f4e8b4d4d1c12138a
https://doi.org/10.4313/jkem.2014.27.2.81
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9
The Phase-change Memory Characteristics of Ge1Se1Te2Thin Films for Sb Photo Doping
Autor: Hong-Bay Chung, Jang-Han Kim, Ki-Hyun Nam
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 25:329-333
For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of material t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c05bac7ef141f00afef98935aef275f0
https://doi.org/10.4313/jkem.2012.25.5.329
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