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pro vyhledávání: '"Jang Fung Cupertino Chen"'
Autor:
Michael C. W. Hsu, Douglas Van Den Broeke, Jungchul Park, Jang Fung Cupertino Chen, Stephen Hsu
Publikováno v:
SPIE Proceedings.
There are many challenges ahead to use ArF for printing 45nm node device. High numerical aperture (NA) exposure tool and double exposure technique (DET) are the promising methods to extend ArF lithography manufacturing to 45nm node at k 1 factor belo
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Thomas Laidig, Uwe Hollerbach, Jungchul Park, Ting Chen, Xuelong Shi, Keith Gronlund, Robert John Socha, Sangbong Park, Douglas Van Den Broeke, Michael C. W. Hsu, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today’s advanced lithogra
Autor:
Michael Hsu, Xuelong Shi, Jang Fung Cupertino Chen, Stephen Hsu, Robert John Socha, Thomas Laidig, Doug Van Den Broeke, Kurt E. Wampler, Uwe Hollerbach
Publikováno v:
SPIE Proceedings.
Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k 1 lithography manufacturing. The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this has
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Xuelong Shi, Uwe Hollerbach, Robert John Socha, Doug Van Den Broeke, Thomas Laidig, Kurt E. Wampler, Michael Hsu
Publikováno v:
Optical Microlithography XVIII.
Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k 1 lithography manufacturing. [1] The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this