Výsledky vyhledávání - "Jang‐Jung Lee"

Standards prepared by drop-on-demand dispenser for SIMS

Autor: Szu-Hsun Wu, Jang Jung Lee, Wan-Hao Lai, Yu-Sheng Yin, Dong Gui, Bo-Jung Chen

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:03F132

Quantitative determination of metal impurities becomes increasingly crucial for the semiconductor industry as integrated circuit critical dimensions continue to shrink. Time-of-flight secondary ion mass spectrometry (TOF SIMS) has been widely used fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c1fe05a7822523141ef550c4cae8defc
https://doi.org/10.1116/1.5019679

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Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Autor: Michael A. Gribelyuk, M. Coppel, Tiezhong Ma, Noel Hoilien, Charles J. Taylor, Jang Jung Lee, Wayne L. Gladfelter, Mike Tiner, Ryan C. Smith, Boyong He, Stephen A. Campbell, Christopher C. Hobbs, Douglas A. Buchanan

Publikováno v: IEEE Transactions on Electron Devices. 48:2348-2356

The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30b239f8fc48bec29e5a211ee32b7b4b
https://doi.org/10.1109/16.954476

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Characterization of strip induced damage in ultra low-k dielectric

Autor: R.Y. Huang, Jang-Jung Lee, Jyu-Horng Shieh, S.M. Jang, M.-S. Liang, H.Y. Chu, Y.N. Su, J.M. Chiou, C.Y. Ting, J.S. Tsai

Publikováno v: ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..

STEM-EDS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVD SiOC type low-k dielectric (k /spl ap/ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c64a28a13fc7dc58feac0b6124d0eb2e
https://doi.org/10.1109/issm.2005.1513330

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Conference

Outdoor airborne contamination control for semiconductor manufacturing process.

Autor: Chia-ching Wan, Jang-Jung Lee, Lien-fang Wu

Publikováno v: 2010 International Symposium on Semiconductor Manufacturing (ISSM); 2010, p1-4, 4p

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Akademický článek

Group IVB Metal Oxides High Permittivity Gate Insulators Deposited From Anhydrous Metal Nitrates.

Autor: Tiezhong Ma, Campbell, Stephen A., Smith, Ryan, Hoilien, Noel, Boyong He, Gladfelter, Wayne L., Hobbs, Christopher, Buchanan, Doug, Taylor, Charles, Gribelyuk, Michael, Tiner, Mike, Coppel, Matthew, Jang Jung Lee

Publikováno v: IEEE Transactions on Electron Devices; Oct2001, Vol. 48 Issue 10, p2348, 9p, 3 Black and White Photographs, 1 Diagram, 1 Chart, 9 Graphs

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Anterior interbody fusion in fractures and fracture-dislocations of the spine

Autor: In Kim, Jang-Jung Lee, Myung-Sang Moon, Young-Kyun Woo

Publikováno v: International orthopaedics. 5(2)

Twenty-five cases of unstable fractures and fracture-dislocations of the spine are reviewed. They were treated at the Catholic Medical College and Centre in a 3-year period, 1975 to 1978. 1. Eleven of the 25 patients were treated by anterior interbod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64effe3e3491e1dd46443bfffe6ac561
https://pubmed.ncbi.nlm.nih.gov/7275416

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