Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Janet E. Hails"'
Autor:
Jean Giess, Michael R. Houlton, Andrew Graham, Janet E. Hails, Stuart J. C. Irvine, David J. Cole-Hamilton
Publikováno v:
Journal of Electronic Materials. 37:1291-1302
Acceptor doping of many II–VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg1−xCdxTe) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature merc
Autor:
Neil Gordon, Andrew Graham, Janet E. Hails, L. G. Hipwood, Jean Giess, P. Abbott, J. Price, C. D. Maxey, C. L. Jones, David J. Hall
Publikováno v:
Journal of Electronic Materials. 36:931-936
Dual waveband infrared detectors can be relatively complicated structures requiring stacking of single waveband detectors. The paper discusses variants of the back-to-back diode structure, which allows the detected waveband to be selected simply by c
Publikováno v:
Journal of Electronic Materials. 36:864-870
II-VI buffer layers grown by molecular beam epitaxy (MBE) onto silicon exhibit a uniform, slightly faceted surface morphology. However, a number of surface defects are apparent and these are amplified by the subsequent growth of mercury cadmium tellu
Publikováno v:
Journal of Crystal Growth. 273:340-346
Simple solid-state colorimetric sensors for precursors used in and toxic by-products of metal organic vapour-phase epitaxy (MOVPE) of mercury cadmium telluride (MCT) are described. 2,2′-Bipyridine and its commercially available 4,4′-dimethyl-, 5,
Autor:
David J. Cole-Hamilton, Nicholas J. Blacker, Janet E. Hails, Jennifer A. J. Pardoe, Keith A. Porter
Publikováno v:
Journal of Crystal Growth. 272:829-835
Two solid-state colorimetric sensors for the precursors (Me 2 Cd, Pr i 2 Te, Hg) and the by-product dimethylmercury (Me 2 Hg) produced in the growth of mercury cadmium telluride by metal organic vapour phase epitaxy are described. KMnO 4 adsorbed ont
Autor:
Geoffrey R. Nash, David J. Hall, Janet E. Hails, G. Masterton, Jean Giess, M. T. Emeny, Neil Gordon, M. K. Ashby, Timothy Ashley, L. Haworth, J.C. Little
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:540-547
Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas
Publikováno v:
Journal of Crystal Growth. :45-49
The use of allyl- iso -propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe
Publikováno v:
Journal of Electronic Materials. 27:624-633
Dimethylcadmium, a precursor for the metalorganic vapor phase epitaxy of mercury cadmium telluride, has been shown to react with gallium arsenide to form trimethylarsine and dimethylarsine. An analogous reaction occurs between di-iso-propyltelluride
Publikováno v:
Journal of Crystal Growth. 183:594-603
Results are presented on the assessment, using a variety of techniques, of methyl, tertiary-butyl telluride as a potential precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal-organic vapour-phase epitaxy (MOVPE). It is concluded that, despi
Publikováno v:
Phosphorus, Sulfur, and Silicon and the Related Elements. 136:427-430
Quantitative GCMS analysis of the decomposition products formed during the gas-phase thermal decomposition of deuterated t-Bu2Se in inert, He, or reducing, H2, ambients reveals the principle mode of decomposition to involve homolytic Se-C bond cleava