Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jane E. Curtin"'
Autor:
Roderick R. Kunz, D. K. Downs, Theodore M. Bloomstein, D. E. Hardy, Jane E. Curtin, Russell B. Goodman
Publikováno v:
Journal of Photopolymer Science and Technology. 12:561-570
We have measured the transparencies of a number of candidate resist materials for 157nm, with an emphasis on determining which chemical platforms would allow resists to be used at maximum thicknesses while meeting requirements for optical density. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a3562ab58d482dfff38c800effe67f
https://doi.org/10.2494/photopolymer.12.561
https://doi.org/10.2494/photopolymer.12.561
Autor:
Vladimir Liberman, Roderick R. Kunz, Jane E. Curtin, Roger F. Sinta, William A. Mowers, Theodore H. Fedynyshyn, Michael Sworin
Publikováno v:
SPIE Proceedings.
A number of fluoro-functionalized poly(4-hydroxystyrene) derivatives, consisting of both blocked and unblocked hexafluoroisopropanol-substituted stryrenes, were prepared and their vacuum-ultraviolet absorption spectra were measured. From our efforts,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1bf1df047e539f320755edfdc90568
https://doi.org/10.1117/12.436858
https://doi.org/10.1117/12.436858
Autor:
Roderick R. Kunz, Theodore H. Fedynyshyn, Michele L. Lind, Russell B. Goodman, Jane E. Curtin, Scott P. Doran
Publikováno v:
Advances in Resist Technology and Processing XVII.
Lithography at 157 nm represents the next evolutionary step in the Great Optical Continuum and is currently under investigation as a possible successor to 193-nm lithography. If successful, the photoresists used for this technology must be initially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a0f5d0f2e1ee66e9f51d400ea5fdd2
https://doi.org/10.1117/12.388317
https://doi.org/10.1117/12.388317
Autor:
D. E. Hardy, D. K. Downs, Jane E. Curtin, Theodore M. Bloomstein, Russell B. Goodman, Roderick R. Kunz
Publikováno v:
SPIE Proceedings.
We have measured the transparencies of a number of a candidate resist materials for 157 nm, with an emphasis on determining which chemical platforms would allow resist to be used at maximum thicknesses while meeting requirements for optical density.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e44dd3a159ebfd3caaec0e7ce18465
https://doi.org/10.1117/12.350200
https://doi.org/10.1117/12.350200
Autor:
Aimee Hungerford, Gopal Narayanan, Stephen T. Palmacci, Christopher Groppi, Margaret B. Stern, Theodore M. Bloomstein, Jane E. Curtin, Christopher K. Walker
Publikováno v:
SPIE Proceedings.
One of the main obstacles encountered in designing low noise, high efficiency, heterodyne receivers and local oscillator sources at submillimeter wavelengths is the quality and cost of waveguide structures. At wavelengths shorter than 400 micrometers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da565c295aa616a1b7e67301dcefb750
https://doi.org/10.1117/12.317377
https://doi.org/10.1117/12.317377
Autor:
Susan G. Cann, Roderick R. Kunz, Scott P. Doran, Jane E. Curtin, Theodore M. Lyszczarz, Lynn M. Eriksen, Anthony R. Forte, Carla M. Nelson-Thomas, Susan C. Palmateer, Margaret B. Stern
Publikováno v:
SPIE Proceedings.
We have characterized line-edge roughness in single-layer, top-surface imaging, bilayer and trilayer resist schemes. The results indicate that in dry developed resists there is inherent line-edge roughness which results from the etch mask, resist (pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516c92f2a6660131de63d61372cda5f5
https://doi.org/10.1117/12.312395
https://doi.org/10.1117/12.312395
Autor:
Robert Clayton Wheland, Roger F. Sinta, Jane E. Curtin, Michael P. Mawn, Roderick R. Kunz, Lois Lo-I Newark Lin, Roger H. French, Kara Williams, Val J. Krukonis, Chien-Ping Chai Kao, Paula M. Wetmore, Michael Switkes
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 3:73
More than 50 fluorocarbon liquids are measured for transpar- ency over the wavelength range 150 to 200 nm for the purpose of iden- tifying a suitably transparent fluid for use in 157-nm liquid immersion lithography. Purification methods such as degas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369acd653facbb6f625f9b0cf8f984be
https://doi.org/10.1117/1.1637366
https://doi.org/10.1117/1.1637366
Autor:
A. K. Bates, Mordechai Rothschild, C. Van Peski, Jane E. Curtin, Theodore M. Bloomstein, Ray S. Uttaro, D. E. Hardy, Jan H. C. Sedlacek, Roderick R. Kunz, Vladimir Liberman, Theodore H. Fedynyshyn, D. K. Downs
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:3262
Lithography at 157 nm is rapidly emerging as the industry-preferred technology for the post-193 nm era. Its target application is for the 100 to 70 nm generations, and it is therefore widely viewed as a “bridge” technology before the next-generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94ff577e1971ea461562ffc72cd8ebe
https://doi.org/10.1116/1.591137
https://doi.org/10.1116/1.591137
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2887
In a novel chemical sensor, the chemical charge coupled device (CCD), electrostatic fields in nanocapillary channels smaller than a Debye length will be used to separate and concentrate ions in solution with a predicted detection limit of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::111446c9a5f00a0a063637175d48838c
https://doi.org/10.1116/1.589750
https://doi.org/10.1116/1.589750
Autor:
Jane E. Curtin, Mark W. Horn, Margaret B. Stern, Mordechai Rothschild, Susan C. Palmateer, Brian E. Maxwell
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:3017
Anisotropic etching for dry development of thick resist layers in oxygen‐based plasmas has been developed for two particular applications: trilayer resist for planarization of steep binary optics structures, and top surface imaged (silylated) resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7380405aacb96c72c27e49eb0a757092
https://doi.org/10.1116/1.588313
https://doi.org/10.1116/1.588313