Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Janay Camp"'
Autor:
Janay Camp, Zhou Ren, Sanjay Kapasi, Juan-Manuel Gomez, Young Ki Kim, Markus Mengel, Stilian Ivanov Pandev, Pradeep Subrahmanyan, Fang Fang, Dimitry Sanko, Christian Sparka, Xueli Hao, Vidya Ramanathan, Pedro Herrera
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Several focus monitoring methods for high volume manufacturing (HVM) have been developed to improve general tool stability maintenance, fleet matching and focus uniformity on product. One technique involving the usage of diffractive gratings requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9f2a22a3cd68f896021fc42befc0d3
https://doi.org/10.1109/asmc.2017.7969243
https://doi.org/10.1109/asmc.2017.7969243
Autor:
Ming Di, Taher Kagalwala, Janay Camp, Dawei Hu, Alok Vaid, Michael Lenahan, Kartik Venkataraman, Da Song, Nam Hee Yoon, Sridhar Mahendrakar, Zhou Ren
Publikováno v:
SPIE Proceedings.
In this paper we propose a “film on grating” (FoG) measurement technique using spectroscopic ellipsometry (SE) that can enable sub-Angstrom level precision for multi-layer film thickness measurement on topographies that closely approximate the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb8dac122439fe622eb60aecaa22b40
https://doi.org/10.1117/12.2260491
https://doi.org/10.1117/12.2260491
Autor:
Fang Fang, Taher Kagalwala, Pedro Herrera, Franz Zach, Stilian Ivanov Pandev, Janay Camp, Alok Vaid
Publikováno v:
SPIE Proceedings.
Self-aligned quadruple patterning (SAQP) processes have found widespread acceptance in advanced technology nodes to drive device scaling beyond the resolution limitations of immersion scanners. Of the four spaces generated in this process from one li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1165f5074d35388864b5648cbe52699e
https://doi.org/10.1117/12.2261620
https://doi.org/10.1117/12.2261620
Autor:
Janay Camp, Da Song, Samuel Gizzi, Alok Vaid, Alice Yueh, Sridhar Mahendrakar, Kartik Venkataraman, Tianhao Zhang, Eric P. Solecky, Michael Lenahan, Steven Seipp, Amir Heller, David Jayez, Shweta Saxena, Nam Hee Yoon
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper we will demonstrate a systematic approach to significantly improve and sustain a large fleet of thickness metrology tools being used for several advanced nodes and products including 10/7nm at GLOBALFOUNDRIES Fab8 site. This challenge i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dcc890f38ffbef126071bf4a92c15a1
https://doi.org/10.1109/asmc.2016.7491099
https://doi.org/10.1109/asmc.2016.7491099
Autor:
Dongsuk Park, Michael E. Adel, Richard McGowan, Patrick Snow, Yue Zhou, Pedro Herrera, Tal Itzkovich, Winston Cho, Janay Camp, Vidya Ramanathan, Karsten Gutjahr, Ki Cheol Ahn, Tal Marciano
Publikováno v:
SPIE Proceedings.
We demonstrate a novel method to establish a root cause for an overlay excursion using optical Scatterometry metrology. Scatterometry overlay metrology consists of four cells (two per directions) of grating on grating structures that are illuminated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402969714a4eaf584438848e9f182abd
https://doi.org/10.1117/12.2219668
https://doi.org/10.1117/12.2219668
Autor:
Fang Fang, Shweta Saxena, Da Song, Kartik Venkataraman, Janay Camp, Michael Lenahan, Dawei Hu, Alok Vaid, Sridhar Mahendrakar, Zhou Ren, Steven Seipp, Nam Hee Yoon
Publikováno v:
SPIE Proceedings.
Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets requirements, especially at 10nm node due to the 3-d geometry of devices and tight process budget. It has become
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b476e15451663c4c2672650e44559107
https://doi.org/10.1117/12.2220462
https://doi.org/10.1117/12.2220462
Autor:
Ashish Mungmode, Hong Xiao, Chanseob Cho, Dmitry Spivak, Ron Taylor, Janay Camp, Dongsheng Fan
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper we evaluate the Reticle Defect Review feature on KLA-Tencor's e-beam review tool, eDR™-7110, and study defect printability of reticle defects on wafer. The RDR feature is able to read KLA-Tencor's reticle inspection results directly w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c734f2c17c55451b71779d1ded5a0e04
https://doi.org/10.1109/asmc.2015.7164418
https://doi.org/10.1109/asmc.2015.7164418
Publikováno v:
SPIE Proceedings.
High aspect ratio defects are more critical at sub 20nm design rule. The impact of these defects in the FEOL module is very critical as it leads to gate leakage which directly translates to yield loss at sub 20nm devices. Image 1a) and 1b) shown belo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200bb403891baae935472cafdd1fe9b4
https://doi.org/10.1117/12.2011574
https://doi.org/10.1117/12.2011574