Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jana Clerico"'
Autor:
Nicolas Pic, Karim Bennedine, Guray Tas, Dario Alliata, Jana Clerico, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Chemical mechanical planarization (CMP) is a critical process for creating high performance interconnected structures. If line structures are under polished, residual copper or barrier will short out the circuitry resulting in defective dies. However
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2667430e7341d1786e35757bcec87b0b
https://doi.org/10.1063/1.2799398
https://doi.org/10.1063/1.2799398
Publikováno v:
SPIE Proceedings.
The benefits of automatic classification of microlithography defects include fast and reliable rework decisions, improved root-cause analysis, and more consistent SPC data that significantly enhances yield in the lithography cell. An adaptive knowled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a67f1870069ecb099485e3bc7c590d11
https://doi.org/10.1117/12.599660
https://doi.org/10.1117/12.599660
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
SiO X N Y ARCs are critical for maintaining CD control in current and future generations of designs. However, even minor fluctuations in t , n , and k across the wafer, or from wafer to wafer, can have a significant impact on ARC performance. For pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1453953080a298d6586e865f8695e3
https://doi.org/10.1117/12.535264
https://doi.org/10.1117/12.535264
Publikováno v:
MRS Proceedings. 782
Precisely controlling the thickness of ultrathin silicon dioxide (SiO2) gate dielectric films is critical for high yield advanced generation semiconductor manufacturing. Advanced methods for producing ultrathin gates deposit both the gate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33a814c935424dd647bbfb9b6c88d44
https://doi.org/10.1557/proc-782-a5.10
https://doi.org/10.1557/proc-782-a5.10