Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jan-Willem Gemmink"'
Autor:
Frank Staals, Wim Tjibbo Tel, A. Tishchenko, C. Prentice, B. Le-Gratiet, Yves Jourlin, J.-G. Simiz, Jan-Willem Gemmink, T. Hasan
Publikováno v:
SPIE Proceedings.
The concept of the multi-source focus correlation method was presented in 2015 [1, 2]. A more accurate understanding of real on-product focus can be obtained by gathering information from different sectors: design, scanner short loop monitoring, scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2350c2665a5c4e1480c2a2b60c7876
https://doi.org/10.1117/12.2219143
https://doi.org/10.1117/12.2219143
Publikováno v:
Microelectronic Engineering. 83:951-955
For the last 25 years, maskless lithography (ML2) has always been perceived as a promising technology because of its superior resolution and flexibility. However, the very low throughput of ML2 compared to that of optical lithography has prevented it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a35fc31899bead861106c6586d2080
https://doi.org/10.1016/j.mee.2005.12.016
https://doi.org/10.1016/j.mee.2005.12.016
Autor:
Stefan Hunsche, A. Wolf, J. T. Neumann, P. van Adrichem, Geert Vandenberghe, L. Van Look, Jan-Willem Gemmink, Mark John Maslow, Hua Cao, Joost Bekaert
Publikováno v:
SPIE Proceedings.
The desire to reduce cost in volume manufacturing has driven up the throughput in the lithographic exposure machines. As a result the power transmitted in the projection optics increases. Although small, the absorption levels in the lens materials ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c32729ce8f7f07b70130002c02e0ed
https://doi.org/10.1117/12.881609
https://doi.org/10.1117/12.881609
Autor:
Bart Laenens, Shaunee Cheng, Koen D'havé, Jan-Willem Gemmink, Geert Vandenberghe, Lieve Van Look, Joost Bekaert, Koen Schreel
Publikováno v:
SPIE Proceedings.
Once a process is set-up in an integrated circuit (IC) manufacturer's fabrication environment, any drift in the proximity fingerprint of the cluster will negatively impact the yield. In complement to the dose, focus and overlay control of the cluster
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fbe957b462f4acc1dd7f7d232b7d5a
https://doi.org/10.1117/12.881606
https://doi.org/10.1117/12.881606
Autor:
Frank Bornebroek, Liesbeth Reijnen, Jan-Willem Gemmink, Gerald Dicker, Ewoud Vreugdenhil, Harold Benten
Publikováno v:
SPIE Proceedings.
If the minimum die area is the main objective of an ASIC application, then each critical layer will have bi-directional mask layout. Then advanced litho technology is required to print the layers with single exposure lithography. If however yield, el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf57000e7974a065e91daef7e008be5
https://doi.org/10.1117/12.771998
https://doi.org/10.1117/12.771998
Autor:
Michael Benndorf, Jan-Willem Gemmink, Vincent Farys, Scott Warrick, Yorick Trouiller, Pascal Gouraud, Jerome Belledent, Dejan Jovanovic, Will Conley
Publikováno v:
SPIE Proceedings.
C045 node (65nm half pitch) technology processes are driving the development of immersion lithography techniques and infrastructures and C032 node (45nm half pitch) is following in its tracks. As semiconductor development enters the arena of low leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2833a86ea69029b79b3814fb7e7475f
https://doi.org/10.1117/12.716807
https://doi.org/10.1117/12.716807
Autor:
Michael Benndorf, Vincent Farys, Scott Warrick, Karim Mestadi, Danilo DeSimone, Will Conley, Jan-Willem Gemmink, David Cruau
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers work hard to shrink critical dimensions in their device architectures and are in the midst of the 45nm node development. Generally, for the 65nm node, critical layers are processed using 193-nm scanners with numerical aper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8417bde10dfb046a9ed0843b37b180e
https://doi.org/10.1117/12.715987
https://doi.org/10.1117/12.715987
Autor:
David Van Steenwinckel, Cesar Garza, Will Conley, Scott Warrick, Pierre-Jerome Goirand, Jan-Willem Gemmink
Publikováno v:
SPIE Proceedings.
The lithography prognosticator of the early 1980's declared the end of optics for sub-0.5mm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc27dbc0af5a2e58ff43bf3a971da4ec
https://doi.org/10.1117/12.714341
https://doi.org/10.1117/12.714341
Autor:
Jerome Belledent, Scott Warrick, Juan-Manuel Gomez, Alex Barr, Emmanuel Sicurani, Rob Morton, Jan-Willem Gemmink, Kevin Lucas, David Cruau, Valerie Plantier, Andrea Mauri, C. Monget, Will Conley, Jean-Damien Chapon
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers are in the midst of the next technology node C045 (65nm half-pitch) development. The difference this time is that the heavy lifting is being done while swimming. Generally, for the C065 node (hp90), critical layers will be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c305d13e3cf69552e7c67761b9ad7cd
https://doi.org/10.1117/12.657158
https://doi.org/10.1117/12.657158
Autor:
Jan-Willem Gemmink, C. Monget, Marc Mikolajczak, Joost van Herk, Scott Warrick, Jean de Caunes, Bertrand Le Gratiet, Jean-Damien Chapon
Publikováno v:
SPIE Proceedings.
On-going complex integration schemes and developments in processes present significant challenges to lithography in manufacturing advanced semiconductor integrated circuits. Although APC solutions are in place to assist in achieving robust CD control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6007824921ae2cb7963e8a0882d6dc66
https://doi.org/10.1117/12.657177
https://doi.org/10.1117/12.657177