Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jan-Tsai Liu"'
Autor:
Jan-Tsai Liu, 劉正財
91
Integrated circuit (IC) technology has been advanced significantly over the last 40 years. The steady progress is critically dependent on the development of optical lithography. However, optical lithography is now facing a number of challenge
Integrated circuit (IC) technology has been advanced significantly over the last 40 years. The steady progress is critically dependent on the development of optical lithography. However, optical lithography is now facing a number of challenge
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19464209483151132756
Autor:
Hou-Yu Chen, Chao-Hsin Chien, Cheng-San Wu, Fu-Liang Yang, Fu-Kuo Hsueh, Chenming Hu, Shyi-Long Shy, Chien-Chao Huang, Chun-Chi Chen, Jan-Tsai Liu
Publikováno v:
IEEE Transactions on Electron Devices. 58:3678-3686
For more than 45 years, photon- and electron-sensitive materials have been used to produce pattern-transfer masks in the lithographic manufacturing of integrated circuits. With the semiconductor technology feature size continuing to shrink and the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8b0f33138df529cd025b7176ea90f1
https://doi.org/10.1109/ted.2011.2163938
https://doi.org/10.1109/ted.2011.2163938
Autor:
Jan-Tsai Liu, Tiao Yuan Huang, Hong-Nien Lin, Meng-Fan Wang, Horng-Chih Lin, Fu-Ju Hou, Chia Yu Lu
Publikováno v:
IEEE Electron Device Letters. 24:102-104
A simplified and improved Schottky-barrier metal-oxide-semiconductor device featuring a self-aligned offset channel length, PtSi Schottky junction, and reduced oxide thickness underneath the sub-gate was proposed and demonstrated. To alleviate the dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1f81740d5f5cc1ffb8522272a89282
https://doi.org/10.1109/led.2002.807717
https://doi.org/10.1109/led.2002.807717
Publikováno v:
Japanese Journal of Applied Physics. 41:L626-L628
A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fa56beafc1c74604342cc671c057db
https://doi.org/10.1143/jjap.41.l626
https://doi.org/10.1143/jjap.41.l626
Autor:
Jan-Tsai Liu, Fu-Liang Yang, ChiaHua Ho, Chenming Hu, Cheng-San Wu, Cho-Lun Hsu, Chun-Chi Chen, Chien-Chao Huang
Publikováno v:
2010 International Electron Devices Meeting.
Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMORRAM) cell and the lowest reported 1µA programming current (I prog , both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd091ef2b9acc2f6a8d283e515b63b2
https://doi.org/10.1109/iedm.2010.5703389
https://doi.org/10.1109/iedm.2010.5703389
Autor:
Hou-Yu Chen, Chenming Hu, Chih-Yen Shen, Hsi-Ta Chuang, Fu-Liang Yang, Chiung-Chih Hsu, Shyi-Long Shy, Chun-Chi Chen, Bih-Tiao Lin, Chien-Chao Huang, Fu-Kuo Hsueh, Jan-Tsai Liu, Cheng-San Wu
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Record area size of 0.039µm2 for a functional 6T-SRAM cell has been successfully achieved with a novel Nano Injection Lithography (NIL) technique and dynamic Vdd regulator (DVR). The NIL technique is not only maskless for minimizing entry cost but a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb9cd0d766befacb979586f37cbcbee
https://doi.org/10.1109/iedm.2009.5424252
https://doi.org/10.1109/iedm.2009.5424252
Autor:
Jan-Tsai Liu, Tiao-Yuan Huang, Ching-te Pan, Horng-Chih Lin, Fu-Hsiang Ko, Men-Fang Wang, Fu-Ju Hou, Hsuen-Li Chen
Publikováno v:
2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..
Patterning of nanoscale Si (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1717e360f229de8cb12f04a35ea66d
https://doi.org/10.1109/imnc.2002.1178573
https://doi.org/10.1109/imnc.2002.1178573
Autor:
Tiao-Yuan Huang, Yiming Li, Meng-Fan Wang, Jan-Tsai Liu, Horng-Chih Lin, Fu-Ju Hou, Simon M. Sze
Publikováno v:
Proceedings of the 2nd IEEE Conference on Nanotechnology.
The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1642a7685e909af5c9ce0aebdad6cfb5
https://doi.org/10.1109/nano.2002.1032226
https://doi.org/10.1109/nano.2002.1032226
Autor:
Jan-Tsai Liu, Meng-Fan Wang, Tiao-Yuan Huang, Hsuen-Li Chen, Guo-Wei Huang, Fu-Ju Hou, Fu-Hsiang Ko, Simon M. Sze, Horng-Chih Lin
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
A novel nano-scale SOI device featuring silicide Schottky source/drain and field-induced S/D extensions is proposed and demonstrated. Excellent p- and n-channel performance with nearly ideal subthreshold swing (/spl sim/ 60 mV/dec.) and high on-/off-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991abf33db631ae326a96a19c6f15533
https://doi.org/10.1109/drc.2002.1029498
https://doi.org/10.1109/drc.2002.1029498
Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel.
Autor:
Horng-Chih Lin, Meng-Fan Wang, Fu-Ju Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, Sze, S.M.
Publikováno v:
Proceedings of the 2nd IEEE Conference on Nanotechnology; 2002, p205-208, 4p