Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jan-Peter Urbach"'
Autor:
Jan-Peter Urbach, Takashi Yasui, Axel Zibold, Christof Matthias Dr. Schilz, Wolfgang Degel, Klaus Boehm, Peter Kuschnerus, Silvio Teuber Semmler, Yuji Kobiyama, Iwao Higashikawa
Publikováno v:
SPIE Proceedings.
Measurement by AIMS is the final step of mask defect control, and its accuracy is the critical issue to make guaranty and improve the mask quality. AIMS157 has developed by Carl Zeiss SMS GmbH and is expected to make a contribution to accelerate the
Autor:
Christof Matthias Dr. Schilz, Iwao Higashikawa, Axel Zibold, Silvio Teuber, Roderick Koehle, Jan-Peter Urbach
Publikováno v:
SPIE Proceedings.
In modern mask manufacturing, a successful defect mitigation strategy has been become crucial to achieve defect free masks for high-end lithography. The basic steps of such a strategy include inspection, repair, and subsequent post-repair qualificati
Publikováno v:
SPIE Proceedings.
One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspect
Autor:
Christof Matthias Dr. Schilz, Iwao Higashikawa, Axel Zibold, Thomas Engel, Jan-Peter Urbach, Armin Semmler, Takashi Yasui, Claudia Hertfelder, Yuji Kobiyama, Peter Kuschnerus
Publikováno v:
SPIE Proceedings.
The challenge to achieve an early introduction of 157 nm lithography requires various advanced metrology systems to evaluate the 65 nm node lithography performances, equipments and processes. Carl Zeiss AIMS tool based on the Aerial Image Measurement
Autor:
Christof Matthias Dr. Schilz, Jan-Peter Urbach, Axel Zibold, Wolfgang Harnisch, Thomas Engel, Claudia Hertfelder, Peter Kuschnerus, Klaus Dr. Eisner
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
The first Aerial Image Measurement System (AIMSTM) for 157 nm lithography worldwide has been brought into operation successfully. Its performance will be demonstrated by AIMSTM measurements at 157 nm wavelength on binary chrome masks. Several through
Autor:
Iwao Higashikawa, Takashi Yasui, Christof Matthias Dr. Schilz, Jan-Peter Urbach, Klaus Dr. Eisner, Peter Kuschnerus, Thomas Engel, Axel Zibold
Publikováno v:
SPIE Proceedings.
The worldwide first Aerial Image Measurement System (AIMS) for 157 nm lithography has been used to measure binary chrome and attenuated phase shift masks at 157 nm wavelength. The AIMS measurements were done for line structures from 200 nm up to 400
Autor:
Donald W. Sweeney, Jan-Peter Urbach, Anton Barty, Gilbert V. Shelden, John S. Taylor, Russell M. Hudyma, Eberhard Spiller
Publikováno v:
SPIE Proceedings.
The high volume inspection equipment currently available to support development of EUV blanks is non-actinic. The same is anticipated for patterned EUV mask inspection. Once potential defects are identified and located by such non-actinic inspection
Autor:
Jan Heumann, Lantian Wang, Larry S. Zurbrick, Maciej W. Rudzinski, Stanley E. Stokowski, Jan-Peter Urbach
Publikováno v:
SPIE Proceedings.
This paper discusses the challenges to alternating phase shift mask defect inspection and new approaches for phase defect detection using multiple illumination methods in conjunction with defect detection algorithm modifications. Die-to-die inspectio
Autor:
Maciej W. Rudzinski, Larry S. Zurbrick, Jan-Peter Urbach, Jan Heumann, Stanley E. Stokowski, Lantian Wang
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
Alternating phase shift masks (altPSM) are gaining importance as a reticle enhancement technique to meet the ITRS Litho Roadmap sub-130 nm node line widths. AltPSM fabrication usually involves etching of the quartz substrate in order to form the phas