Výsledky vyhledávání - "Jan-Dirk Kähler"

Surface passivation of in situ doped n-type polysilicon on oxide (POLO) layers for silicon solar cells

Autor: Krügener, Jan, Haase, Felix, Hollemann, Christina, Peibst, Robby, Höhne, Uwe, Jan-Dirk Kähler, H. Jörg Osten

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb234d7d80100d40bb17b373712a18f5

Introducing pinhole magnification by selective etching: Application to poly-Si on ultra-thin silicon oxide films

Autor: Jan Krügener, Marvin Dzinnik, Robby Peibst, Mircea Turcu, Jan-Dirk Kähler, D. Tetzlaff, Yevgeniya Larionova, Tobias Wietler, Uwe Hohne, Sina Reiter

Publikováno v: Energy Procedia 124 (2017)

Carrier selective junctions formed by polycrystalline silicon (poly-Si) on ultra-thin silicon oxide films are currently in the spotlight of silicon photovoltaics. We develop a simple method using selective etching and conventional optical microscopy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e877ead52c5fe18ab1af6672ae3af0da
http://www.repo.uni-hannover.de/handle/123456789/2664

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Finding pinholes in carrier selective polycrystalline Si / crystalline Si contacts: like a needle in a haystack

Autor: Dominic Tetzlaff, Jan Krügener, Yevgeniya Larionova, Sina Reiter, Mircea Turcu, Nils Folchert, Robby Peibst, Uwe Höhne, Jan-Dirk Kähler, Tobias Wietler

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3883682fd79606000d588662efb45c4f
https://doi.org/10.1002/9783527808465.emc2016.6838

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Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Autor: Yevgeniya Larionova, Jan-Dirk Kähler, Sina Reiter, D. Tetzlaff, Yvo Barnscheidt, Tobias Wietler, Uwe Hohne, Jan Krügener, Robby Peibst, Mircea Turcu

Publikováno v: 2016 21st International Conference on Ion Implantation Technology (IIT).

Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resist

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8a8e7a4443aa362c0719402f922b56c
https://doi.org/10.1109/iit.2016.7882868

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Dopant diffusion from p+-poly-Si into c-Si during thermal annealing

Autor: Mircea Turcu, Jan Krügener, Robby Peibst, Yevgeniya Larionova, Sina Reiter, Bettina Wolpensinger, Tobias Wietler, Jan-Dirk Kähler, D. Tetzlaff

Publikováno v: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Passivating junctions, like hole-collecting p-polycrystalline silicon/SiO x /crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c56c73549ee64287107b88a02f8fc264
https://doi.org/10.1109/pvsc.2016.7750083

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On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces

Autor: Jan Krügener, Robby Peibst, Mircea Turcu, Jan-Dirk Kähler, Tobias Wietler, Uwe Hohne, Rolf Brendel, Sina Reiter, Yevgeniya Larionova, D. Tetzlaff

Publikováno v: physica status solidi (a). 214:1700058

We investigate the passivation quality of hole-collecting junctions consisting of thermally or wet-chemically grown interfacial oxides, sandwiched between a monocrystalline-Si substrate and a p-type polycrystalline-silicon (Si) layer. The three diffe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c62f9eea841e9fd375f045061d21f01
https://doi.org/10.1002/pssa.201700058

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