Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Jan Y. Andersson"'
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 5, Pp 4500608-4500608 (2013)
Monolithic integration of a metallic photonic crystal (mPhC) structure onto semiconductor infrared (IR) photodetectors can enhance the detector performances. In order to experimentally investigate the parameters involved in optimizing the transmissio
Externí odkaz:
https://doaj.org/article/d668cb0a3d9243c5b3323feb18643335
Publikováno v:
Sensors and Actuators A: Physical. 213:116-121
A novel X-ray detector diode, optimized for angular independent (isotropic) dose response, is presented. The diode is designed as a silicon cube with p–n junctions on all six sides, which creates a device that is close to being symmetrical in 3D. T
Autor:
Oscar Gustafsson, Amir Karim, Jesper Berggren, Carl Asplund, Qin Wang, Mattias Hammar, Jan Y. Andersson
Publikováno v:
Infrared Physics & Technology. 59:89-92
We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase
Publikováno v:
Solid-State Electronics. 60:100-104
Uncooled microbolometer thermal infrared detector technology is presently revolutionizing the infrared technology field. Essential improvement of the cost/performance ratio would be achieved by mic ...
Autor:
Carl Asplund, Oscar Gustafsson, R. Marcks von Würtemberg, Ulf Ekenberg, Stéphane Junique, Amir Karim, Susanne Almqvist, Henk Martijn, Jesper Berggren, Anders Hallén, Mattias Hammar, Hedda Malm, Qin Wang, Linda Höglund, Jan Y. Andersson, Bertrand Noharet, Andrey Gromov, Andy Zhang
Publikováno v:
Infrared Physics & Technology. 54:287-291
We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWI ...
Autor:
Qin Wang, Oscar Gustafsson, Jan Y. Andersson, Linda Höglund, Mattias Hammar, Stanley Wissmar, Per-Olof Holtz, Henry H. Radamson, Hedda Malm, Henk Martijn, Carl Asplund, Staffan Hellström, Per Ericsson, Bertrand Noharet
Publikováno v:
Infrared Physics & Technology. 53:227-230
Acreo has a long tradition of working with quantum structure based infrared (IR) detectors and arrays. This includes QWIP (quantum well infrared photodetector), QDIP (quantum dot infrared photodetector), and InAs/GaInSb based photon detectors of diff
Autor:
Qin Wang, Carl Asplund, Linda Höglund, E. Petrini, Jan Y. Andersson, Susanne Almqvist, Hedda Malm, Håkan Pettersson, Per-Olof Holtz
Publikováno v:
Infrared Physics & Technology. 52:272-275
Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot e ...
Autor:
Qin Wang, Michael Salter, Stéphane Junique, Susanne Almqvist, Bertrand Noharet, Duncan Platt, Andy Zhang, Jan Y. Andersson
Publikováno v:
SPIE Proceedings.
Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve
Autor:
Carl Asplund, Sanjay Krishna, Rickard Marcks von Würtemberg, Amir Karim, Hedda Malm, Elena Plis, Jan Y. Andersson
Publikováno v:
physica status solidi c. 9:1690-1692
We report on the electrical and material characterization of InAs/GaSb type-II superlattice (T2SL) mid-wave infrared (MWIR) photodiodes with different passivation schemes on the mesa-sidewalls with significant differences in the resulting low tempera
Autor:
Y Lindberg-Eriksson, Z. Fakoor-Biniaz, Jorgen Alverbro, Hedda Malm, O Öberg, C Nordahl, P. Helander, Henk Martijn, Jan Borglind, A Bustamente, Urban Halldin, Jan Y. Andersson, Bernhard Hirschauer
Publikováno v:
Infrared Physics & Technology. 42:329-332
Due to the well established gallium arsenide material processing technology quantum well infrared photodetectors (QWIPs) are suitable for high resolution infrared detector arrays, operating in the LWIR or MWIR region, or simultaneous detection in bot