Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jan Sonsky"'
Autor:
J.J.T.M. Donkers, David Calton, Michael J. Uren, Mark Gajda, Jeroen Croon, William M. Waller, Saurabh Kumar Pandey, Martin Kuball, Jan Sonsky
Publikováno v:
Waller, W M, Gajda, M, Pandey, S, Donkers, J J T M, Calton, D, Croon, J, Sonsky, J, Uren, M J & Kuball, M 2017, ' Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition ', IEEE Transactions on Electron Devices, vol. 64, no. 10, 8013764, pp. 4044-4049 . https://doi.org/10.1109/TED.2017.2738669
The stoichiometry of low-pressure chemical vapor deposition SiNx surface passivation is shown to change vertical conductivity at the top of the epitaxial stack in GaN-on-Si power high-electron mobility transistors (HEMTs). This changes the charge sto
Autor:
Ivor Guiney, Michael J. Uren, Jan Sonsky, Peter A. Houston, William M. Waller, David J. Wallis, Martin Kuball, K. B. Lee, Saurabh Pandey, Colin J. Humphreys
Publikováno v:
Waller, W, Kuball, M, Uren, M, Lee, K B, Houston, P A, Wallis, D J, Guiney, I, Humphreys, C J, Pandey, S & Šonský, J 2016, ' Subthreshold Mobility in AlGaN/GaN HEMTs ', IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1861-1865 . https://doi.org/10.1109/TED.2016.2542588
Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as $4\times 10^{10}$ cm $^{-2}$ with good accuracy. Zero lateral electric field is applied, in contrast to con
Autor:
Saurabh Pandey, Mark Gajda, Jan Sonsky, Jeroen Croon, Enrico Zanoni, Gaudenzio Meneghesso, Isabella Rossetto, C. De Santi, Matteo Meneghini, Godefridus Adrianus Maria Hurkx
We investigate the potential distribution and breakdown of GaN-on-silicon HEMTs by using a test structure with a floating sense node located between gate and drain, in the access region. To demonstrate the effectiveness of the adopted method, we anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::150b9ebc0589c286e9e2fcf67ad1ddfe
http://hdl.handle.net/11577/3276908
http://hdl.handle.net/11577/3276908
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A novel EDMOS device with a breakdown voltage of ∼10V and a record high RF performance, with f T ∼ 90 GHz and /MAX ∼ 450 GHz, is presented. The transistor is composed of a thin gate oxide (logic) in the channel and a thicker oxide (IO) in the d
Autor:
Saurabh Pandey, David Calton, Mark Gajda, Serge Karboyan, Jeroen Croon, Michael J. Uren, William M. Waller, J.J.T.M. Donkers, Martin Kuball, Jan Sonsky
Publikováno v:
Waller, W, Gajda, M, Pandey, S, Donkers, J, Calton, D, Croon, J, Karboyan, S, Sonsky, J, Uren, M & Kuball, M 2017, ' Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates ', IEEE Transactions on Electron Devices, vol. 64, no. 3, 3, pp. 1197-1202 . https://doi.org/10.1109/TED.2017.2654800
Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b2948a828d74cfc3d62c5dcfac01f51
https://hdl.handle.net/1983/8aa978e6-5f9b-4ec7-ab15-ebbb4fea5dec
https://hdl.handle.net/1983/8aa978e6-5f9b-4ec7-ab15-ebbb4fea5dec
Publikováno v:
Nanoelectronics
The scope of this chapter is to present the state of the art of the available power devices, highlighting the main potential and limitation and indicating the path for the future materials and devi ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dbf5a6bf47c69dddc494ebe5e24c750
http://hdl.handle.net/11577/3253344
http://hdl.handle.net/11577/3253344
Autor:
Jan Sonsky, Godefridus Adrianus Maria Hurkx, Isabella Rossetto, Jeroen Croon, Enrico Zanoni, Matteo Meneghini, Mark Gajda, Saurabh Pandey, Gaudenzio Meneghesso
This paper reports on an extensive analysis of the breakdown of GaN-based Schottky-gated HEMTs submitted to high-voltage stress. The analysis was carried out on transistors with different lengths of the drain-side gate-head ( $L_{\mathrm {GH}}$ ), co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3f2a90ed7975bb44242ad15a8be87cd
http://hdl.handle.net/11577/3231739
http://hdl.handle.net/11577/3231739
Autor:
Marco Bertin, Ponky Ivo, Jeroen Croon, Jan Sonsky, Enrico Zanoni, Gaudenzio Meneghesso, Godefridus Adrianus Maria Hurkx, Giulia Cibin, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. 61:1987-1992
This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is, time-dependent drain-source breakdown. With current-controlled breakdown measurements and
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A new methodology is presented that directly extracts the location and amount of trapped charge in GaN HEMTs by making use of a special test structure with an additional sense node in-between the gate and drain. The technique is validated on three wa
Autor:
Dilip M. Risbud, Jan Sonsky, Barry Wynne, Mark Gajda, Kenneth D. Pedrotti, Maire Power, James W Pomeroy, Indranil Chatterjee, Michael J. Uren, Martin Kuball
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of −250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near th