Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Jan Mulkens"'
Publikováno v:
Optical and EUV Nanolithography XXXV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e733c1023788b9f0b6b22891ee842a3
https://doi.org/10.1117/12.2614537
https://doi.org/10.1117/12.2614537
Autor:
Paul van Adrichem, DS Nam, Jan Mulkens, Emily Gallagher, Andreas Frommhold, Marleen Kooiman, Vidya Vaenkatesan, Michael Kubis, Lieve Van Look
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
The mask is a known contributor to intra-field fingerprints at the wafer level. Traditionally, a 3σ distribution of critical dimensions (CDs) on mask was considered sufficient to characterize the contribution to the CD distribution at wafer level. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec4a3c5421687e4c7b614cb727f5119
https://doi.org/10.1117/12.2538243
https://doi.org/10.1117/12.2538243
Autor:
Kevin Gao, Chiyan Kuan, Jo Finders, Vidya Vaenkatesan, Emily Gallagher, Michael Kubis, Qing Tian, Jan Mulkens, James N. Wiley
Publikováno v:
Photomask Technology 2018.
The mask is a known contributor to intra-field and local patterning fingerprints at the wafer level. Traditionally, a 3σ distribution of critical dimensions (CDs) on mask was sufficient to characterize the contribution to the CD distribution at wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f807efa1e584043baac76eca8e97e925
https://doi.org/10.1117/12.2502588
https://doi.org/10.1117/12.2502588
Autor:
Jan Mulkens, Michael Kubis, Hu Xuerang, Mark John Maslow, Eric Ma, Harm Dillen, Wim Tjibbo Tel, Kevin Chou, Bram Slachter, Paul Christiaan Hinnen, Xuedong Liu, Weiming Ren, Kevin Liu, Fei Wang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f547774b522ea1b6850b32e8908e9156
https://doi.org/10.1117/12.2297283
https://doi.org/10.1117/12.2297283
Autor:
Mark John Maslow, Michael Kubis, Chris Spence, Jan Mulkens, Michael Hanna, Bram Slachter, Vadim Timoshkov, Wim Tjibbo Tel
Publikováno v:
SPIE Proceedings.
In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c91611601e331d1d52963069bde6e2b
https://doi.org/10.1117/12.2260155
https://doi.org/10.1117/12.2260155
Autor:
Bijoy Rajasekharan, Henry Megens, Lotte Willems, Jochem Sebastiaan Wildenberg, Emil Schmitt-Weaver, Peter Hanzen Wardenier, Jan Mulkens, Lydia Vergaij-Huizer, Frank Elich, Grzegorz Grzela, Kaustuve Bhattacharyya, Albert Chen, Velislava Ignatova, Evert Mos, Leon Verstappen, Joost van Heijst, Omer Adam, Brian Lewis, Marc Kea
Publikováno v:
SPIE Proceedings.
Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad30bebf488dfb35db5806e8867fdfe2
https://doi.org/10.1117/12.2230390
https://doi.org/10.1117/12.2230390
Autor:
Charlotte Chahine, Nader Shamma, David Hellin, Johan Vertommen, Michael Kubis, Katja Viatkina, Daniel Sobieski, Benjamin Kam, Philippe Leray, Liesbeth Reijnen, Melisa Luca, Rich Wise, Guillaume Mernier, Mircea Dusa, Patrick Jaenen, Girish Dixit, Jan Mulkens
Publikováno v:
SPIE Proceedings.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97cca33425eb580c04d63c37bd786fd
https://doi.org/10.1117/12.2220591
https://doi.org/10.1117/12.2220591
Autor:
Jan Mulkens, Harry Sewell
Publikováno v:
Annual Review of Materials Research. 39:127-153
This review of materials development for optical lithography covers two areas: materials for optical steppers and scanners, and materials for EUV lithography. In the former, materials development for advanced immersion lenses and for high-index immer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6551961058ec5606f901b88c7543329f
https://doi.org/10.1146/annurev-matsci-082908-145309
https://doi.org/10.1146/annurev-matsci-082908-145309
Autor:
Nandasiri Samarakone, Jan Mulkens, Paul Graeupner, Jos Benschop, Paul Jacques Van Wijnen, Diane McCafferty, Louis Markoya, Harry Sewell
Publikováno v:
Journal of Photopolymer Science and Technology. 21:613-620
High-n immersion lithography has been under development for the past three years, the target being to extend Optical Lithography to the 32nm node and beyond. Feasibility studies have been generating results on all aspects of the technology. This pape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f914d5527a1cbd435349ef16d469772d
https://doi.org/10.2494/photopolymer.21.613
https://doi.org/10.2494/photopolymer.21.613
Autor:
Matthew Lipson, Harry Sewell, Jan Mulkens, Christian Wagner, Diane McCafferty, Naundasiri Samarakone, Louis Markoya
Publikováno v:
Journal of Photopolymer Science and Technology. 20:651-663
A feasibility study is being conducted on the subject of extending the resolution capability of immersion lithography exposure systems with high-n fluids to 35nm and below. Fluids, for evaluation, are available from chemical vendor companies such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7869813dfef7fe36823c8e92a08eacb
https://doi.org/10.2494/photopolymer.20.651
https://doi.org/10.2494/photopolymer.20.651