Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jan Morasch"'
Autor:
Andreas Klein, Wolfram Jaegermann, Jan Morasch, Shun Kashiwaya, Thierry Toupance, Verena Streibel
Publikováno v:
Surfaces
Volume 1
Issue 1
Pages 7-89
Volume 1
Issue 1
Pages 7-89
Polycrystalline anatase thin films, (001)- and (101)-oriented anatase TiO 2 single crystals and (001)- and (110)-oriented rutile TiO 2 single crystals with various surface treatments were studied by photoelectron spectroscopy to obtain their surface
Autor:
Jan C. Hellmann, Jan Morasch, Wolfram Jaegermann, Michael Graetzel, Sebastian Siol, S. David Tilley, Andreas Klein, Jonas Deuermeier
Publikováno v:
ACS Applied Materials & Interfaces. 8:21824-21831
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work,
Autor:
S. Hesse, Jan Morasch, Robert W. Stark, Suman Narayan, L. Hussein, Lisa Krell, Marcus Schulze, Svenja Bachmann, Johann Schnagl
Publikováno v:
Applied Surface Science. 371:613-623
Surface modification with gas plasma is an efficient and easy way to improve the surface energy and the tribological behavior of diamond-like carbon (DLC) coatings, e.g., in biomedical implants or as protective coatings. However, the long-term perfor
Publikováno v:
physica status solidi (a). 213:1615-1624
CuO thin films were grown by reactive magnetron sputtering and analyzed with respect to their structural, chemical, optical, and electrical properties. The films are strongly p-type with carrier concentrations of ∼ 1020 cm−3. Carrier accumulation
Autor:
Sebastian Siol, Barbara Malič, Raluca C. Frunza, Wenbin Wu, Robert Schafranek, Karsten Rachut, Mareike V. Hohmann, Hana Uršič, Mirko Weidner, Sebastian Schmelzer, Gutlapalli Venkata Rao, Michael Naderer, Sandrine Payan, Yvonne Gassenbauer, Andreas Klein, Shunyi Li, Verena Pfeifer, Richard Günzler, Lichao Jia, Feng Chen, Jan Morasch, Klaus Reichmann, Jürgen Gassmann, Anne Fuchs, Mario Maglione, Cosmina Ghinea, Klaus Ellmer, Cristina Chirila, Emmanuel Arveux, Lucian Pintilie, Christoph Körber, Thorsten J. M. Bayer, Paul Erhart, F. Säuberlich, Ulrich Böttger
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:571-576
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental
Autor:
Arie Zaban, Karsten Rachut, Joachim Brötz, Paul Erhart, Andreas Klein, Shunyi Li, Jan Morasch, Juan Bisquert, Sven Rühle, Iván Mora Seró, Philip Reckers, Wolfram Jaegermann, Verena Pfeifer, Thomas Mayer
Publikováno v:
The Journal of Physical Chemistry Letters. 4:4182-4187
Using photoelectron spectroscopy, the interface formation of anatase and rutile TiO2 with RuO2 and tin-doped indium oxide (ITO) is studied. It is consistently found that the valence band maximum of rutile is 0.7 ± 0.1 eV above that of anatase. The a
Publikováno v:
physica status solidi (a). 211:93-100
Bi2O3 thin films deposited by RF magnetron sputtering have been studied in situ by using photoelectron spectroscopy. UV/VIS transmission spectroscopy and XRD measurements were carried out to determine the optical and structural properties of the film
Autor:
Karsten Albe, Klaus Ellmer, Melanie Gröting, Lucian Pintilie, Andreas Klein, Klaus Reichmann, Jan Morasch, Lichao Jia, Michael Naderer, Christina Chirila, Shunyi Li
Publikováno v:
Physical Review B. 88
The formation of an interface between Bi${}_{2}$O${}_{3}$, Fe${}_{2}$O${}_{3}$, BiFeO${}_{3}$, Bi${}_{0.5}$Na${}_{0.5}$TiO${}_{3}$, and the high work function metallic RuO${}_{2}$ is studied using photoelectron spectroscopy with in situ RuO${}_{2}$ d
Autor:
Tomás Calmeiro, Suman Nandy, Andreas Klein, Rodrigo Martins, Jonas Deuermeier, Elvira Fortunato, Jan Morasch, Hans F. Wardenga, Sebastian Siol
Publikováno v:
Journal of Applied Physics. 119:235303
High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ co
Publikováno v:
Journal of Physics D: Applied Physics. 49:155306
Co3O4 samples have been deposited using RF-magnetron sputtering from an oxide target. In-situ X-Ray and Ultraviolet Photoelectron Spectroscopy and X-Ray Diffraction have been carried out to identify the phase and composition of the films. The work fu