Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jan Lettens"'
Autor:
Martin Domeij, Jimmy Franchi, Sotirios Maslougkas, Peter Moens, Jan Lettens, Jake Choi, Fredrik Allerstam
Publikováno v:
Materials Science Forum. 1062:498-503
Similar charge to failure distributions with mean values of about 50 C/cm2 were measured for planar SiC MOSFETs and MOS capacitors. Fast occurring and saturating negative flatband and threshold voltage drops were found in time resolved 1 second long
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e9f22965a991210ad480c4499f727e
https://doi.org/10.4028/p-95van7
https://doi.org/10.4028/p-95van7
Autor:
Gaudenzio Meneghesso, M. Domeij, Jan Lettens, J. Franchi, Matteo Meneghini, C. De Santi, Enrico Zanoni, F. Masin, Peter Moens
Publikováno v:
JOURNAL OF APPLIED PHYSICS
Journal of applied physics
Journal of applied physics
We propose an analytical model to reproduce the non-monotonic instability of the threshold voltage in 4H-SiC MOSFETs submitted to a positive gate stress bias. Experimental analysis of the threshold voltage transients indicates that both electron and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::194ef461d29310d0e0a167ed1f57e111
https://doi.org/10.1063/5.0057285
https://doi.org/10.1063/5.0057285