Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Jan Kunc"'
Publikováno v:
Physical Review Research, Vol 6, Iss 3, p 033063 (2024)
The dynamics of plasmons in nanoribbons of (hydrogen intercalated) quasi-freestanding single-layer graphene is studied by terahertz spectroscopy both in the steady state and upon photoexcitation by an ultrashort near infrared laser pulse. The use of
Externí odkaz:
https://doaj.org/article/3c568a243a4842cd9ccf4feb809ac7d9
Autor:
Martin Rejhon, Xinliu Zhou, Francesco Lavini, Alessandra Zanut, Filip Popovich, Lorenzo Schellack, Lukasz Witek, Paulo Coelho, Jan Kunc, Elisa Riedo
Publikováno v:
Advanced Science, Vol 10, Iss 6, Pp n/a-n/a (2023)
Abstract Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is di
Externí odkaz:
https://doaj.org/article/a90a4f655d264451a95a22cd0a4779cb
Autor:
Václav Dědič, Tomáš Fridrišek, Jan Franc, Jan Kunc, Martin Rejhon, Utpal N. Roy, Ralph B. James
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of ma
Externí odkaz:
https://doaj.org/article/ffb10ca4f74941ef851c03c41c3ca2fa
Autor:
Jan Kunc, Martin Rejhon
Publikováno v:
Applied Sciences, Vol 10, Iss 7, p 2354 (2020)
We measured a 2D peak line shape of epitaxial graphene grown on SiC in high vacuum, argon and graphene prepared by hydrogen intercalation from the so called buffer layer on a silicon face of SiC. We fitted the 2D peaks by Lorentzian and Voigt line sh
Externí odkaz:
https://doaj.org/article/496d282809194c03a9f507a1fb035d5b
Autor:
Martin Rejhon, Xinliu Zhou, Francesco Lavini, Alessandra Zanut, Filip Popovich, Lorenzo Schellack, Lukasz Witek, Paulo Coelho, Jan Kunc, Elisa Riedo
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany).
Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is discovered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65e708ed0dca929053f317c7aef07790
https://pubmed.ncbi.nlm.nih.gov/36599685
https://pubmed.ncbi.nlm.nih.gov/36599685
Autor:
Věra Hájková, M. Krůs, Jaromír Chalupský, Libor Juha, Jan Kunc, V. Vozda, Tomáš Burian, Jan Čechal, Nikita Medvedev
Publikováno v:
Carbon. 161:36-43
The thermal decomposition on silicon carbide (SiC) is one of the most used growth techniques for fabrication of epitaxial graphene. However, it significantly diminishes graphene’s otherwise exceptional carrier mobility. Reduction of the substrate i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c894a662c49ca52270dd576e26672c
https://doi.org/10.1016/j.carbon.2020.01.028
https://doi.org/10.1016/j.carbon.2020.01.028
Autor:
Martin Rejhon, Francesco Lavini, Ali Khosravi, Mykhailo Shestopalov, Jan Kunc, Erio Tosatti, Elisa Riedo
Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological level. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7f8f9f4f8329d6ccd579486244d318
https://doi.org/10.21203/rs.3.rs-1051183/v1
https://doi.org/10.21203/rs.3.rs-1051183/v1
Autor:
Martin Rejhon, Francesco Lavini, Ali Khosravi, Mykhailo Shestopalov, Jan Kunc, Erio Tosatti, Elisa Riedo
Publikováno v:
Nature nanotechnology.
Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ba8d3550ed87e21af6bf0bd23780f47
https://pubmed.ncbi.nlm.nih.gov/36316542
https://pubmed.ncbi.nlm.nih.gov/36316542
Publikováno v:
Journal of Alloys and Compounds. 789:607-612
We have grown homoepitaxial high resistivity SiC layers on conducting SiC substrates. We develop a method to determine the thickness of grown layers by scanning confocal Raman spectroscopy (SCRS). We also grow epitaxial graphene on SiC layers to labe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3bad9ea53a8d2fc05c06dc791cee059
https://doi.org/10.1016/j.jallcom.2019.02.305
https://doi.org/10.1016/j.jallcom.2019.02.305
Publikováno v:
Journal of Raman Spectroscopy. 50:465-473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917d2d6007f3fa29046aa179be4bc26b
https://doi.org/10.1002/jrs.5533
https://doi.org/10.1002/jrs.5533