Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Jan Jakabovic"'
Autor:
Peter Juhasz, Juraj Nevrela, Michal Micjan, Miroslav Novota, Jan Uhrik, Lubica Stuchlikova, Jan Jakabovic, Ladislav Harmatha, Martin Weis
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 47-52 (2016)
The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good
Externí odkaz:
https://doaj.org/article/98849446d02a45aca19e3c5884b6adc5
Autor:
Dusan Pudis, Jaroslav Kovac, Jan Jakabovic, Andrej Vincze, Sieler Gottschalch, Gabriele Benndorf, Bernd Rheinländer, Reinhard Schwabe
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 1, Iss 1, Pp 34-37 (2002)
Our study is focused on the optical and electronic properties of InAs (GaAs) monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temp
Externí odkaz:
https://doaj.org/article/30ce24625e2f46f5afb02b8341d64d7b
Autor:
Jaroslav Kováč, Milan Pavúk, Juraj Nevrela, Martin Donoval, Michal Micjan, Martin Weis, Jan Jakabovic, Miroslav Novota, Sona Kovacova, Peter Juhasz, Martin Jagelka, Marek Cigan
Publikováno v:
Applied Surface Science. 395:86-91
Conductive copolymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative to transparent conductive oxides because of its flexibility, transparency, and low-cost production. Four different secondar
Autor:
Martin Weis, Michal Micjan, Lubica Stuchlikova, Miroslav Novota, Juraj Nevrela, Jan Jakabovic, Ladislav Harmatha, Peter Juhasz, Jan Uhrik
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 47-52 (2016)
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 47-52 (2016)
The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good
Publikováno v:
Synthetic Metals. 211:84-88
Organic semiconductor 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl)naphthalene (H2T26N) is employed as an active layer in organic field-effect transistors (OFETs) or as a hole-transport layer in organic light-emitting diodes (OLEDs). In OFET device the
Autor:
Jaroslav Kováč, Juraj Nevrela, Martin Weis, Jan Jakabovic, Miroslav Novota, Peter Juhasz, Michal Micjan, Sona Kovacova, Milan Pavúk
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 53:1139-1146
The electrical and structural properties of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin films deposited from aqueous dispersion using different concentrations of selected secondary dopants are studied in detail. An impr
Publikováno v:
Organic Electronics. 17:240-246
The charge transport is investigated in pentacene diodes by steady-state current–voltage technique, impedance spectroscopy method, and transient capacitance spectroscopy method. The temperature dependencies were analyzed to obtain activation energi
Autor:
L'ubomir Sladek, Peter Telek, Sona Flickyngerova, Frantisek Horinek, Jan Jakabovic, Martin Donoval, Martin Weis, K. Rendek, Anton Kuzma, Peter Juhasz, Jan Uhrik, Andrej Vincze, Alexander Satka
Publikováno v:
Corrosion Science. 88:400-404
The electrical Ca test is a standard method for the estimation of the water vapour transmission rate through the encapsulation barriers. Here, we discuss the corrosion process of thin Ca films under different preparation conditions, and the impact of
Autor:
Michal Nemec, Miro Zeman, Miroslav Mikolášek, Ladislav Harmatha, Jan Jakabovic, Marian Vojs, Vlastimil Řeháček, Dong Zhang
Publikováno v:
Thin Solid Films. 558:315-319
We investigate the current transport mechanisms in the amorphous silicon/crystalline silicon heterojunction and the change of these processes when an intrinsic amorphous silicon passivation layer with a varying thickness is introduced at the interfac
Publikováno v:
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