Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jan Hoentschel"'
Autor:
Yoo Seon Song, Markus Lenski, Mohammed F. Karim, Keith Flynn, Jan Hoentschel, Carsten Peters, Jens-Uwe Sachse, Omur Isil Aydin, Jun Wu, Bastian Hausdorfer, Mahesh Siddabathula, Konrad Semmler, Jurgen Daleiden
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 627-636 (2024)
The motivation of this study was to solve the high $\rm I_{D,off}$ problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses. As a result, $\rm I_{D,off}$ increases and $\rm BV_{DSS}$ decreases as the dose
Externí odkaz:
https://doaj.org/article/d77d4e1cd30946fbb5080720e9583d00
Autor:
Yogadissen Andee, Jan Hoentschel, Irfan Saadat, Florent Ravaux, Amal Al Ghaferi, Dirk Utess, Dominik Kleimaier, Zhixing Zhao, Steffen Lehmann, Karen Sloyan
Publikováno v:
IEEE Transactions on Electron Devices. 68:3230-3237
In this work, we study and characterize the layout-induced device strain and its impact on RF performance of 22-nm-ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI) P-channel field-effect transistor (PFET). This will he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c567c43566c52b61f9f1605404678e66
https://doi.org/10.1109/ted.2021.3077828
https://doi.org/10.1109/ted.2021.3077828
Publikováno v:
IEEE Transactions on Electron Devices, 68(2):9305941, 497-502. IEEE
Quantification of interface traps for double-gate fully depleted silicon-on-insulator transistors is needed for accurate device modeling and technology development. The trap density can be estimated as a function of the activation energy from the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b4799699675d932c9a047238eeecb63
http://www.scopus.com/inward/record.url?scp=85098787528&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85098787528&partnerID=8YFLogxK
Autor:
Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bef3e5c3d875db0c12f48ec8f64e10b
https://doi.org/10.1109/bcicts50416.2021.9682480
https://doi.org/10.1109/bcicts50416.2021.9682480
Publikováno v:
Solid-State Electronics. 192:108286
To meet the rising demand for Random Telegraph Noise (RTN) analysis, a new method to quickly separate RTN impacted devices from devices that show no RTN has been proposed and validated via existing analysis methods.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1413f9849a44412c067c2ea64df0c6
https://doi.org/10.1016/j.sse.2022.108286
https://doi.org/10.1016/j.sse.2022.108286
Autor:
D. Lipp, Y. Raffel, A. Jayakumar, R. Olivo, R. Pfuetzner, R. Illgen, A. Muehlhoff, Jan Hoentschel, L. Pirro, Michael Otto, O. Zimmerhackl, Alban Zaka, Konrad Seidel
Publikováno v:
IRPS
In this work buried channel devices were successfully integrated in HKMG. Analog, noise and reliability performance have been reported and compared to a surface device. The devices were processed to have the same V Tsat for the nominal geometry of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54120bc6f07b89a11389b90cbb78b2d2
https://doi.org/10.1109/irps46558.2021.9405122
https://doi.org/10.1109/irps46558.2021.9405122
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e605a6a66681e5aabc53ef96a347edc
https://doi.org/10.7567/ssdm.2020.a-3-02
https://doi.org/10.7567/ssdm.2020.a-3-02
Autor:
O. Zimmerhackl, Nigel Chan, T. Kleissner, Michael Otto, A. Jayakumar, Jan Hoentschel, L. Pirro
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS).
An improved set of Scribe Line Monitors (SLMs) with high device densities have been designed for inline monitoring of Random Telegraph Noise (RTN) and transistor local mismatch. This infrastructure offers increased statistics from measurement on a si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fafb046618057b376046e7f10f2615c4
https://doi.org/10.1109/icmts48187.2020.9107935
https://doi.org/10.1109/icmts48187.2020.9107935
Autor:
Klaus Hempel, R. Taylor, Tianbing Chen, Alexis Divay, Tom Herrmann, Alban Zaka, Patrick James Artz, Yogadissen Andee, Steffen Lehmann, L. Pirro, Zhixing Zhao, Carsten Grass, Jan Hoentschel, Ricardo Sousa, Juergen Faul, David Harame, J. Mazurier, Luca Lucci
Publikováno v:
ESSDERC
This paper proposes three methods of reducing device gate resistance and parasitic capacitance while boosting transconductance of MOSFET on 22FDX®. The f MAX can be improved by 50% and up to 75% for NFET and PFET with respect to a standard 2.0µm fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff08f1a388899bb2e0e1a09eac0394e
https://doi.org/10.1109/essderc.2019.8901693
https://doi.org/10.1109/essderc.2019.8901693
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
A new test methodology for the transit frequency f T and the maximum oscillation frequency I max has been developed. The novel measurement setup is optimized for high volume extraction enabling statistical analysis of both f T and I max in a small ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dce6d03d18438572444daf9acdd5b22
https://doi.org/10.1109/eurosoi-ulis45800.2019.9041858
https://doi.org/10.1109/eurosoi-ulis45800.2019.9041858