Zobrazeno 1 - 10
of 344
pro vyhledávání: '"Jan Genoe"'
Autor:
Horacio Londoño‐Ramírez, Xiaohua Huang, Jordi Cools, Anna Chrzanowska, Clément Brunner, Marco Ballini, Luis Hoffman, Soeren Steudel, Cédric Rolin, Carolina Mora Lopez, Jan Genoe, Sebastian Haesler
Publikováno v:
Advanced Science, Vol 11, Iss 10, Pp n/a-n/a (2024)
Abstract Electrode grids are used in neuroscience research and clinical practice to record electrical activity from the surface of the brain. However, existing passive electrocorticography (ECoG) technologies are unable to offer both high spatial res
Externí odkaz:
https://doaj.org/article/bace9af9de7a4a26960ea58505828373
Autor:
Julian A. Steele, Tom Braeckevelt, Vittal Prakasam, Giedrius Degutis, Haifeng Yuan, Handong Jin, Eduardo Solano, Pascal Puech, Shreya Basak, Maria Isabel Pintor-Monroy, Hans Van Gorp, Guillaume Fleury, Ruo Xi Yang, Zhenni Lin, Haowei Huang, Elke Debroye, Dmitry Chernyshov, Bin Chen, Mingyang Wei, Yi Hou, Robert Gehlhaar, Jan Genoe, Steven De Feyter, Sven M. J. Rogge, Aron Walsh, Edward H. Sargent, Peidong Yang, Johan Hofkens, Veronique Van Speybroeck, Maarten B. J. Roeffaers
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
Lattice anchoring, in its varied forms, has proven effective at regulating the energetics of metastable phases of polymorphic crystals. Here, the authors utilize top-down photolithography to embed a tessellating 3D interfacial network into otherwise-
Externí odkaz:
https://doaj.org/article/15770c203ad647c9a63ddc27ffa5149b
Autor:
Joo Hyoung Kim, Francois Berghmans, Abu Bakar Siddik, Irem Sutcu, Isabel Pintor Monroy, Jehyeok Yu, Tristan Weydts, Epimitheas Georgitzikis, Jubin Kang, Yannick Baines, Yannick Hermans, Naresh Chandrasekaran, Florian De Roose, Griet Uytterhoeven, Renaud Puybaret, Yunlong Li, Itai Lieberman, Gauri Karve, David Cheyns, Jan Genoe, Paweł E. Malinowski, Paul Heremans, Kris Myny, Nikolas Papadopoulos, Jiwon Lee
Publikováno v:
Sensors, Vol 23, Iss 21, p 8803 (2023)
Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significan
Externí odkaz:
https://doaj.org/article/f46f47aa7928450f96ef930d57874066
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Charge carrier mobility is one of the key parameters that are used to evaluate the electrical quality of thin film semiconductors, whilst it is easily overestimated. Here, Rolinet al. use the gated van der Pauw method to extract charge mobility indep
Externí odkaz:
https://doaj.org/article/f84b720b697949e5b1888798d8c27983
Autor:
Nele Mentens, Jan Genoe, Thomas Vandenabeele, Lynn Verschueren, Dirk Smets, Wim Dehaene, Kris Myny
Publikováno v:
Transactions on Cryptographic Hardware and Embedded Systems, Vol 2019, Iss 4 (2019)
Electronic devices on plastic foil, also referred to as flexible electronics, are making their way into mainstream applications. In the near future, flexible electronic labels can be embedded in smart blisters, but also used as mainstream technology
Externí odkaz:
https://doaj.org/article/6e0138cb99d742a1ae71c3975f69809a
Covering both TFT technologies, and the theory and practice of circuit design, this book equips engineers with the technical knowledge and hands-on skills needed to make circuits on foil with organic or metal oxide based TFTs for applications such as
Autor:
Nirav Annavarapu, Iakov Goldberg, Athina Papadopoulou, Karim Elkhouly, Jan Genoe, Robert Gehlhaar, Paul Heremans
Publikováno v:
ACS Photonics. 10:1583-1590
Autor:
Iakov Goldberg, Nirav Annavarapu, Simon Leitner, Karim Elkhouly, Fei Han, Niels Verellen, Tibor Kuna, Weiming Qiu, Cedric Rolin, Jan Genoe, Robert Gehlhaar, Paul Heremans
Publikováno v:
ACS Photonics. 10:1591-1600
Autor:
Xiaohua Huang, Horacio Londono-Ramirez, Marco Ballini, Chris Van Hoof, Jan Genoe, Sebastian Haesler, Georges Gielen, Nick Van Helleputte, Carolina Mora Lopez
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3312-3323
Publikováno v:
IEEE Transactions on Electron Devices. 69:5603-5606