Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jan Dyczewski"'
Autor:
Michał A. Borysiewicz, Michal Kozubal, Rafal Jakiela, Jacek Ratajczak, Karolina Pągowska, Elżbieta Dynowska, Jan Dyczewski, Elzbieta Guziewicz, Adam Barcz, D. Snigurenko
Publikováno v:
Acta Physica Polonica A. 128:832-835
Autor:
Wojciech Jung, Andrzej Taube, Anna Piotrowska, Elżbieta Dynowska, Jan Dyczewski, Jakub Grochowski, Jakub Kaczmarski, Eliana Kamińska
Publikováno v:
Journal of Display Technology. 11:528-532
Transparent amorphous oxide semiconductors (TAOSs), such as In–Ga–Zn–O (a-IGZO), are the subject of intensive experimental and theoretical research aimed at applications in transparent electronics. With the development of novel device applicati
Autor:
Hideo Hosono, Jan Dyczewski, Jakub Grochowski, Jakub Kaczmarski, Katsumi Abe, Hidenori Hiramatsu, Hideya Kumomi, Toshio Kamiya, Yuichiro Hanyu
Publikováno v:
J. Disp. Technol.. 11:523-527
Amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) are employed in current flat-panel displays. It is known that deposition conditions and post-deposition thermal annealing affect structure and electrical properties of a-IGZO thin films
Autor:
Paweł Borowicz, Maciej Kozubal, Pawel Prystawko, Adam Barcz, Jakub Jasiński, Jan Dyczewski, Michał A. Borysiewicz, Jakub Kaczmarski, Eliana Kamińska, M. Juchniewicz, Andrzej Taube, Anna Piotrowska, Elżbieta Dynowska, Rafal Jakiela
Publikováno v:
MRS Proceedings. 1635:9-14
The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×10
Autor:
Eliana Kamińska, Michał A. Borysiewicz, Maciej Wielgus, Anna Piotrowska, Jan Dyczewski, Elżbieta Dynowska, Valery Kolkovsky
Publikováno v:
physica status solidi (a). 209:2463-2469
Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture. The influences of the oxygen content in the mixture and of the total gas pressure in the r
Autor:
Eliana Kamińska, Anna Piotrowska, Jan Dyczewski, Elżbieta Dynowska, M. Ekielski, Andrzej Taube, D. Pucicki, Jakub Kaczmarski
Publikováno v:
SPIE Proceedings.
In-Ga-Zn-O thin films fabricated by reactive RF magnetron sputtering have been investigated for their compositional, structural, morphological, electrical and optical properties. All resulting films present the amorphous microstructure, and root mean
Publikováno v:
Photonics Letters of Poland. 4
Autor:
George K. Celler, Jan Dyczewski, Krystyna Gołaszewska, Michal Kozubal, Rafal Jakiela, Tomasz Wojciechowski, Adam Barcz, Jacek Ratajczak
Publikováno v:
Journal of Applied Physics. 115:223710
Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backsca