Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jan Devenson"'
Autor:
Tadas Paulauskas, Vaidas Pačebutas, Renata Butkutė, Bronislovas Čechavičius, Arnas Naujokaitis, Mindaugas Kamarauskas, Martynas Skapas, Jan Devenson, Mária Čaplovičová, Viliam Vretenár, Xiaoyan Li, Mathieu Kociak, Arūnas Krotkus
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)
Abstract The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are empl
Externí odkaz:
https://doaj.org/article/58e07f5625c24c46b660ea6220f7192f
Publikováno v:
Japanese Journal of Applied Physics. 62:040903
InAsBi layers with different bismuth content were grown on InAs substrates by solid source MBE. The amount of bismuth incorporated in the layers was estimated using X-ray diffraction measurements. The relaxation degree of the grown crystalline layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2e4197656289f74d5cd75704bf9f5e
https://doi.org/10.35848/1347-4065/acc777
https://doi.org/10.35848/1347-4065/acc777
Autor:
Sandra Stanionytė, Tadas Malinauskas, Gediminas Niaura, Martynas Skapas, Jan Devenson, Arūnas Krotkus
Publikováno v:
Materials, Basel : MDPI AG, 2022, vol. 15, iss. 14, art. no. 4847, p. 1-12
Materials; Volume 15; Issue 14; Pages: 4847
Materials; Volume 15; Issue 14; Pages: 4847
Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — α-Bi and β-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4431eb9a658969a96dbd87634968e0f9
https://repository.vu.lt/VU:ELABAPDB137321890&prefLang=en_US
https://repository.vu.lt/VU:ELABAPDB137321890&prefLang=en_US
Autor:
Tadas Paulauskas, Bronislovas Čechavičius, Vytautas Karpus, Lukas Jočionis, Saulius Tumėnas, Jan Devenson, Vaidas Pačebutas, Sandra Stanionytė, Viktorija Strazdienė, Andrejus Geižutis, Mária Čaplovičová, Viliam Vretenár, Michael Walls, Arūnas Krotkus
The GaAs1–xBix semiconductor alloy allows one to achieve large bandgap reduction and enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being developed for near- to mid-infrared lasers, multi-junction solar cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e2ed86cc1bf7515cb9c87fa89c0066b9
https://hal.archives-ouvertes.fr/hal-03044054
https://hal.archives-ouvertes.fr/hal-03044054
Autor:
Gediminas Šlekas, Dalius Seliuta, Dovile Zimkaite, Jan Devenson, Andzej Urbanovic, Z. Kancleris
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. :1-7
In this work, we investigate the transmission properties of planar arrays of split-ring resonators formed on the surface of a dielectric plate. The modulation concept is demonstrated by using several metamaterial structures with a different effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adbe5339487c29a71b212ef396aad9cd
https://doi.org/10.1109/tthz.2014.2367240
https://doi.org/10.1109/tthz.2014.2367240
Autor:
Ramūnas Adomavičius, Jan Devenson, D. Zimkaite, Gediminas Šlekas, Dalius Seliuta, A. Urbanovič, Z. Kancleris
Publikováno v:
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
Optically controlled mode switching in the split-ring resonators deposited on the lattice-matched InGaAs/InP was demonstrated at excitation wavelengths 900–1200 nm. Using tunable excitation wavelength as well as split-ring resonators of different c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2457f191c7d8b23ab580ff5b9f5d9e12
https://doi.org/10.1109/irmmw-thz.2015.7327454
https://doi.org/10.1109/irmmw-thz.2015.7327454
Autor:
Nina Dyakonova, Gintaras Valušis, Wojciech Knap, J. Lusakowski, Yahya Moubarak Meziani, Frederic Boeuf, Edmundas Širmulis, Dalius Seliuta, Jan Devenson, Thomas Skotnicki
Publikováno v:
IEICE Transactions on Electronics. :993-998
Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634371576e2aed7a17c046014025690d
https://doi.org/10.1093/ietele/e89-c.7.993
https://doi.org/10.1093/ietele/e89-c.7.993
Publikováno v:
Electronics Letters. 51:1908-1909
Modulation of the terahertz radiation with the modulation depth up to 95% has been demonstrated employing optically tunable Fabry–Perot resonance phenomenon in semi-insulating GaAs plate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e7b8748ae8c17589895136c9e43c3e
https://doi.org/10.1049/el.2015.2396
https://doi.org/10.1049/el.2015.2396