Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Jan‐Chi Yang"'
Autor:
Yen‐Jung Chen, Hung‐Yang Lo, Chun‐Chien Chiu, Che‐Hung Wang, Jan‐Chi Yang, Jui‐Yuan Chen, Wen‐Wei Wu
Publikováno v:
Small Structures, Vol 5, Iss 7, Pp n/a-n/a (2024)
Resistive random‐access memory (RRAM) is considered the next‐generation nonvolatile memory owing to its simplicity, low power consumption, and high storage density. Resistive switching (RS) occurs in a wide range of materials among the transition
Externí odkaz:
https://doaj.org/article/5f1656e6165642179c6eee4a43c42d48
Autor:
Arpan Biswas, Yongtao Liu, Nicole Creange, Yu-Chen Liu, Stephen Jesse, Jan-Chi Yang, Sergei V. Kalinin, Maxim A. Ziatdinov, Rama K. Vasudevan
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-12 (2024)
Abstract Optimization of experimental materials synthesis and characterization through active learning methods has been growing over the last decade, with examples ranging from measurements of diffraction on combinatorial alloys at synchrotrons, to s
Externí odkaz:
https://doaj.org/article/6f2ffb804d2c4fb5ba0bd0c944f8b6b8
Autor:
Ping-Chun Wu, Chia-Chun Wei, Qilan Zhong, Sheng-Zhu Ho, Yi-De Liou, Yu-Chen Liu, Chun-Chien Chiu, Wen-Yen Tzeng, Kuo-En Chang, Yao-Wen Chang, Junding Zheng, Chun-Fu Chang, Chien-Ming Tu, Tse-Ming Chen, Chih-Wei Luo, Rong Huang, Chun-Gang Duan, Yi-Chun Chen, Chang-Yang Kuo, Jan-Chi Yang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epi
Externí odkaz:
https://doaj.org/article/389747fe4fc04b479396688904c4e1e3
Autor:
Chun-Chien Chiu, Yao-Wen Chang, Yu-Cheng Shao, Yu-Chen Liu, Jenn-Min Lee, Shih-Wen Huang, Wanli Yang, Jinghua Guo, Frank M. F. de Groot, Jan-Chi Yang, Yi-De Chuang
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract We have successfully fabricated high quality single crystalline La0.7Sr0.3MnO3 (LSMO) film in the freestanding form that can be transferred onto silicon wafer and copper mesh support. Using soft x-ray absorption (XAS) and resonant inelastic
Externí odkaz:
https://doaj.org/article/152bd4e1c7bc48a5b98520631930a891
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract Researchers have long been seeking multifunctional materials that can be adopted for next-generation nanoelectronics, and which, hopefully, are compatible with current semiconductor processing for further integration. Along this vein, comple
Externí odkaz:
https://doaj.org/article/a521fa8365af49bb8aa72ae3ce5c31f3
Autor:
Jhih-Wei Chen, Shun-Tsung Lo, Sheng-Chin Ho, Sheng-Shong Wong, Thi-Hai-Yen Vu, Xin-Quan Zhang, Yi-De Liu, Yu-You Chiou, Yu-Xun Chen, Jan-Chi Yang, Yi-Chun Chen, Ying-Hao Chu, Yi-Hsien Lee, Chung-Jen Chung, Tse-Ming Chen, Chia-Hao Chen, Chung-Lin Wu
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a suppo
Externí odkaz:
https://doaj.org/article/e41776571763424b93505d2150065c4d
Autor:
Rama K. Vasudevan, Ye Cao, Nouamane Laanait, Anton Ievlev, Linglong Li, Jan-Chi Yang, Ying-Hao Chu, Long-Qing Chen, Sergei V. Kalinin, Petro Maksymovych
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-10 (2017)
Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO3 film resulting from the formation of a f
Externí odkaz:
https://doaj.org/article/19d05e5e6c9e4828bec40f89b32535c2
Autor:
Yang Li, Yaming Jin, Xiaomei Lu, Jan-Chi Yang, Ying-Hao Chu, Fengzhen Huang, Jinsong Zhu, Sang-Wook Cheong
Publikováno v:
npj Quantum Materials, Vol 2, Iss 1, Pp 1-6 (2017)
Ferroelectrics: Electrically rewritable vortex pairs in bismuth ferrite A demonstration of electrically-rewritable vortex pairs in a ferroelectric could provide a route to realizing vortex memory devices. Swirling vortex structures of electrical pola
Externí odkaz:
https://doaj.org/article/aff608db36f54eca8024d518be3d36f4
Autor:
Chien-Chih Lai, Jie-Wen Chen, Jui-Cheng Chang, Che-Yu Kuo, Yu-Chen Liu, Jan-Chi Yang, Yi-Ting Hsieh, Shih-Wen Tseng, Ying-Chih Pu
Publikováno v:
ACS Applied Materials & Interfaces. 14:24919-24928
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2180ccbd9fa5d3c8057b5b411efec22c
https://doi.org/10.1021/acsami.2c03514
https://doi.org/10.1021/acsami.2c03514
Autor:
Chun-Chien Chiu, Sheng-Zhu Ho, Jenn-Min Lee, Yu-Cheng Shao, Yang Shen, Yu-Chen Liu, Yao-Wen Chang, Yun-Zhe Zheng, Rong Huang, Chun-Fu Chang, Chang-Yang Kuo, Chun-Gang Duan, Shih-Wen Huang, Jan-Chi Yang, Yi-De Chuang
Publikováno v:
Nano Letters. 22:1580-1586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93edde5e55d3606ac6c3dc441557dbdb
https://doi.org/10.1021/acs.nanolett.1c04434
https://doi.org/10.1021/acs.nanolett.1c04434