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pro vyhledávání: '"Jamison, John J."'
Autor:
Sarwar, A. T. M. Golam, Carnevale, Santino D., Yang, Fan, Kent, Thomas F., Jamison, John J., McComb, David W., Myers, Roberto C.
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations.
Externí odkaz:
http://arxiv.org/abs/1506.03849
Autor:
Sarwar, ATM Golam, Carnevale, Santino D., Yang, Fan, Kent, Thomas F., Jamison, John J., McComb, David W., Myers, Roberto C.
Publikováno v:
Small; Oct2015, Vol. 11 Issue 40, p5402-5408, 7p
