Zobrazeno 1 - 7
of 7
pro vyhledávání: '"James Yong Meng Lee"'
Autor:
Simon T.H. Chan, Elgin Quek, Kheng-Chok Tee, K. H. Jo, Wai Shing Lau, W.K. Aw, Hyung-Rock Kim, Chee-Wee Eng, L. Chan, Kwang-Seng See, James Yong Meng Lee
Publikováno v:
Microelectronics Reliability. 48:919-922
For PMOS (p-channel metal–oxide–semiconductor) transistors isolated by shallow trench isolation (STI) technology, reverse narrow width effect (RNWE) was observed for large gate lengths such that the magnitude of the threshold voltage becomes smal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1751554c2131e85f5684eecca0021618
https://doi.org/10.1016/j.microrel.2008.02.005
https://doi.org/10.1016/j.microrel.2008.02.005
Publikováno v:
Japanese Journal of Applied Physics. 42:2621-2627
The original shift-and-ratio method tends to significantly over-estimate the effective channel length Leff of metal–oxide–silicon (MOS) transistors with halo/pocket implants because the carrier mobility of the short transistor tends to be smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e893c9b1c314d80c612e8dad1652d9b
https://doi.org/10.1143/jjap.42.2621
https://doi.org/10.1143/jjap.42.2621
Autor:
W. S. Li, James Yong Meng Lee, Ying Keung Leung, Alex See, Eng Fong Chor, Shiang Yang Ong, Lap Chan
Publikováno v:
Microelectronics Journal. 33:55-60
Integration issues involved in incorporating indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. The inclusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d691ad57421de81dd14ccf2ee453ba
https://doi.org/10.1016/s0026-2692(01)00104-5
https://doi.org/10.1016/s0026-2692(01)00104-5
Publikováno v:
Advanced Microelectronic Processing Techniques.
In this paper we study the causes of an unusually high N- channel transistor punch through leakage using a shallow trench isolation process. This resistive short between source and drain exhibits high structural dependence and has a strong dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c569d05be08f05ec901354437368f4e
https://doi.org/10.1117/12.405372
https://doi.org/10.1117/12.405372
Autor:
James Yong Meng Lee, Ying Keung Leung, Lap Chan, Eng Fong Chor, W. S. Li, Alex See, Shiang Yang Ong
Publikováno v:
SPIE Proceedings.
Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ea30d88e4d60af184b831690eb4e330
https://doi.org/10.1117/12.405423
https://doi.org/10.1117/12.405423
Publikováno v:
Advanced Microelectronic Processing Techniques.
The effect of boron penetration on device performance and gate oxide reliability of P+ polysilicon gate MOSFET of a dual oxide process with salicide block module was investigated. To get stable non-salicided poly sheet resistance, a capping oxide is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff8c54eff3ac2490244382effe1d5c0f
https://doi.org/10.1117/12.405378
https://doi.org/10.1117/12.405378
Publikováno v:
Journal of The Electrochemical Society. 149:G485
The effects of indium and boron interaction in the channel region on device performance have been investigated. The two main areas of focus are the impact of replacing boron with indium as the channel and pocket implants. These are assessed based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd13e9aef66c850fea267e5cb2bfee5
https://doi.org/10.1149/1.1488918
https://doi.org/10.1149/1.1488918