Zobrazeno 1 - 10
of 27
pro vyhledávání: '"James Weil"'
Autor:
Eliezer Oliveira, Chenxi Li, Xiang Zhang, Anand Puthirath, Mahesh R. Neupane, James Weil, A. Glen Birdwell, Tony Ivanov, Seoyun Kong, Tia Grey, Harikishan Kannan, Robert Vajtai, Douglas Galvao, Pulickel Ajayan
Publikováno v:
MRS Advances. 7:543-546
The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hy
Publikováno v:
Journal of Materials Research. 36:4703-4711
Molybdenum trioxide ( $$\hbox {MoO}_{3}$$ ) is a commonly implemented acceptor layer for the surface-doped diamond devices. This work proposes an approach to engineer the intrinsic electrochemical properties of the $$\hbox {MoO}_{3}$$ surface through
Autor:
Douglas S. Galvao, Anand B. Puthirath, James Weil, Tia Gray, A. Glen Birdwell, Abhijit Biswas, Chenxi Li, Tony Ivanov, Xiang Zhang, Seoyun Kong, Mahesh R. Neupane, Robert Vajtai, Harikishan Kannan, Eliezer Fernando Oliveira, Pulickel M. Ajayan
Publikováno v:
Carbon. 182:725-734
It is known that surface terminations contribute significantly to diamond properties. As one of the most commonly studied types, oxygen-terminated diamond surface possesses a positive electron affinity (PEA) and hydrophilicity, making it suitable for
Autor:
Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane
Publikováno v:
IEEE Transactions on Electron Devices. 67:2270-2275
Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe invers
Autor:
Leonard M. De La Cruz, Mahesh R. Neupane, Dmitry Ruzmetov, Tony Ivanov, James Weil, A. G. Birdwell, Pankaj B. Shah
Publikováno v:
Radar Sensor Technology XXV.
High power radio frequency (RF) transfer-doped diamond field effect transistors (FETs) are being fabricated at the Army Research Laboratory (ARL). To implement these into radar systems we have a parallel effort to extract accurate compact models from
Publikováno v:
Radar Sensor Technology XXV.
Surface induced transfer doping (SITD) is a novel, highly efficiency doping technique that is being used to invoke the p-type surface conductivity of intrinsic diamond for high-frequency, high-power electronic devices. In the SITD process, a high ele
Autor:
A. G. Birdwell, Khamsouk Kingkeo, Mahesh R. Neupane, James Weil, Leonard M. De La Cruz, Dmitry Ruzmetov, Pankaj B. Shah, Tony Ivanov
Publikováno v:
Radar Sensor Technology XXV.
Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with
Publikováno v:
Radar Sensor Technology XXV.
The gate-controlled hole gas at the hydrogenated diamond surface was predicted to have a plasmonic response to a terahertz and sub-terahertz electric field, making p-diamond field effect transistors (FETs) promising candidates for implementing room t
Autor:
A. Glen Birdwell, Daniel Shoemaker, Kevin G. Crawford, Sukwon Choi, Tony Ivanov, Hiu Yung Wong, James Weil, Leonard M. De La Cruz, James Spencer Lundh, Pankaj B. Shah
Publikováno v:
Applied Physics Letters. 119:143502
In this report, the thermal performance of a hydrogen (H)-terminated diamond field-effect transistor (FET) is investigated using Raman spectroscopy and electrothermal device modeling. First, the thermal conductivity (κdiamond) of the active diamond
Publikováno v:
MRS Advances. 2:2235-2240
Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2