Zobrazeno 1 - 5
of 5
pro vyhledávání: '"James Waldemer"'
Autor:
Qiang Yu, Gwang-Soo Kim, Jeffrey Garrett, Derek Thomson, Georgios Dogiamis, Nathan Monroe, Ruonan Han, Yunzhe Ma, James Waldemer, Ye Seul Nam, Gustavo Beltran, Vijaya Neeli, Surej Ravikumar, Said Rami, Chris Pelto, Eric Karl
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2933bd26fa97a298ca5b213abcd7539
https://doi.org/10.1109/ims37962.2022.9865589
https://doi.org/10.1109/ims37962.2022.9865589
Autor:
Said Rami, Qiang Yu, James Waldemer, Yunzhe Ma, Surej Ravikumar, Guannan Liu, Jeffrey Garrett
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a mmWave switch designed using novel back-end-of-line (BEOL) in Intel 22nm FinFET (22FFL) technology. In the newly developed mmWave BEOL, ExpressVia is introduced, which allows direct transistor connection to thick metal layer. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75875d3175bc84f1dcc06cfbc652af2e
https://doi.org/10.1109/ims19712.2021.9574903
https://doi.org/10.1109/ims19712.2021.9574903
Autor:
Yunzhe Ma, Yi-Shin Yeh, Triveni S. Rane, Carlos Nieva, Jeremy Wahl, Surej Ravikumar, Guannan Liu, Jessica C. Chou, Sell Bernhard, Mark Armstrong, Saurabh Morarka, Vijaya B. Neeli, Mauricio Marulanda, Nathan Monroe, Said Rami, Hui Fu, Dyan Ali, L. Paulson, Hyung-Jin Lee, Sameer Joglekar, Thomas C. Brown, Jabeom Koo, Jeffrey Garrett, Ruonan Han, Qiang Yu, Georgios C. Dogiamis, Eric Karl, James Waldemer, Ying Zhang
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents the recent mmWave and sub-THz oriented technology developments as part of RF design-technology co-optimization (DTCO) efforts in Intel 22nm FinFET process (22FFL). Several back-end-of-line (BEOL) and front-end-of-line (FEOL) impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f2fc7a955450fb986a2df6a680fade
https://doi.org/10.1109/iedm13553.2020.9372105
https://doi.org/10.1109/iedm13553.2020.9372105
Autor:
C.-Y. Su, M. Maksud, James Waldemer, David Young, J. Palmer, S. Ramey, Mark Armstrong, H. Li, C. Perini, L. Paulson, M. El-tanani, H. Greve, Benjamin J. Orr, Sunny Chugh, Y. Yang
Publikováno v:
IRPS
The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45dc665dc065eb2ae6d5561d5bd1891d
https://doi.org/10.1109/irps45951.2020.9128314
https://doi.org/10.1109/irps45951.2020.9128314
Autor:
Zhanping Chen, W. Xu, A. Sultana, Sell Bernhard, Ayan Kar, Nikola Stojanovic, Ranjith Kumar, Jingyan Zhang, R. Russell, M. Giraud-Carrier, J. Sandford, J. Stoeger, K. Phoa, Lajoie Travis W, Guannan Liu, S. Liu, Yuegang Zhang, S. Cha, S. Mudanai, Yunzhe Ma, Dale Young, P. Dhage, L. Paulson, P. Bai, L. Nguyen, J. Wan, Ku Chieh-Jen, H.-J. Lee, B. Bigwood, A. S. Roy, Eric Karl, James Waldemer, Pengyu Fan, K. Pierce
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A FinFET technology named 22FFL has been developed that combines high-performance, ultra-low power logic and RF transistors as well as single-pattern backend flow for the first time. High performance transistors exhibit 57%/87% higher NMOS/PMOS drive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ac3235b60c3edc9353cb96a4a26bb7
https://doi.org/10.1109/iedm.2017.8268475
https://doi.org/10.1109/iedm.2017.8268475