Zobrazeno 1 - 10
of 21
pro vyhledávání: '"James W. Holm−Kennedy"'
Publikováno v:
SPIE Proceedings.
A novel optical distributed-wavelength filter for IC integration and chip-integrated spectroscopy is described. The filter structure is of Fabry-Perot character. It is comprised of a wedge-shaped dielectric film sandwiched between two reflecting thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df42cfca3738127091caa8cf21aad38
https://doi.org/10.1117/12.48685
https://doi.org/10.1117/12.48685
Autor:
J.G. Nash, James W. Holm‐Kennedy
Publikováno v:
Physical Review B. 16:2834-2848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b223e7c2aac4d8955e03af3b9b17c92e
https://doi.org/10.1103/physrevb.16.2834
https://doi.org/10.1103/physrevb.16.2834
Autor:
James W. Holm‐Kennedy, J.G. Nash
Publikováno v:
Physical Review B. 15:3994-4006
The intervalley electron‐phonon deformation potential constants in n ‐silicon were determined by fitting the theoretical high electric field transport properties (established using an ``exact'' solution to the Boltzmann transport equation) to tho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03446b6a06794914441ae62fec4f9b6e
https://doi.org/10.1103/physrevb.15.3994
https://doi.org/10.1103/physrevb.15.3994
Publikováno v:
Sensors and Actuators. 14:69-77
In a drift-type photodiode, the photocurrent is an integral transform of the energy spectrum of the incident light. Thus, the bias dependence of the photocurrent contains information on the color components of the light source. An a-Si:H color discri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a762c87530b24127cf8dd3abd43dd04
https://doi.org/10.1016/0250-6874(88)80007-6
https://doi.org/10.1016/0250-6874(88)80007-6
Autor:
James W. Holm-Kennedy, Israel Ury
Publikováno v:
Surface Science. 73:179-189
It is shown that confinement leading to substantial subbanding may be realized in the channel region of a junction field effect device. Two types of devices are considered: One having a doped surface channel the other having a doped buried channel. U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc137d9f8a136ea7453c1411a6320314
https://doi.org/10.1016/0039-6028(78)90488-0
https://doi.org/10.1016/0039-6028(78)90488-0
Publikováno v:
Review of Scientific Instruments. 46:147-151
A new instrument which electrically characterizes devices and materials at high voltages applied for short duration at low repetition rates is described. The instrument automatically measures and plots I−V or J−E sample and device characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a81693e36a4cac1ed77023007ec4e1
https://doi.org/10.1063/1.1134159
https://doi.org/10.1063/1.1134159
Autor:
James W. Holm-Kennedy
Publikováno v:
Physical Review Letters. 32:111-114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48f670ec7765b7d8e75c807057f9e8d
https://doi.org/10.1103/physrevlett.32.111
https://doi.org/10.1103/physrevlett.32.111
Publikováno v:
Surface Science. 46:232-250
The electron energy relaxation is investigated as a function of the “electron temperature” Te in the n-channel of a (100) surface silicon MOSFET device by inspecting the phenomenological energy relaxation time τe(Te). τe is determined theoretic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::271b5b490e2b69ab1e02d90cc2383b84
https://doi.org/10.1016/0039-6028(74)90250-7
https://doi.org/10.1016/0039-6028(74)90250-7
Autor:
J.G. Nash, James W. Holm‐Kennedy
Publikováno v:
Applied Physics Letters. 27:38-41
The transport roles of electron‐electron (e‐e) and intravalley impurity scattering (neutral and ionized) in n‐Si at 77 K were studied under high‐electric‐field (0–3000 V/cm) nonequilibrium conditions, by comparing the theoretical and expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7a9eefeacc39e9fbb3ed55bd47c203c
https://doi.org/10.1063/1.88258
https://doi.org/10.1063/1.88258
Autor:
James W. Holm‐Kennedy, K. S. Champlin
Publikováno v:
Journal of Applied Physics. 43:1889-1903
The small‐signal microwave (9.61 GHz) dielectric constant and microwave resistivity were measured under warm electron conditions at 77 °K lattice temperature. Both were found to be anisotropic. The dielectric constant exhibited a ``hump'' at high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5201af4e9378ee1f50bd4abeafffec6
https://doi.org/10.1063/1.1661413
https://doi.org/10.1063/1.1661413