Zobrazeno 1 - 10
of 30
pro vyhledávání: '"James W. Garland"'
Publikováno v:
Journal of Electronic Materials. 42:3331-3336
The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p–n junctions and low Shockley–Read–Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30 years by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2021d44771ca0d9d3e7cb8d38f2ed96
https://doi.org/10.1007/s11664-013-2739-0
https://doi.org/10.1007/s11664-013-2739-0
Publikováno v:
Journal of Electronic Materials. 38:1800-1804
Strained HgTe/CdZnTe or InAs/GaInSb, and essentially unstrained HgTe/CdTe superlattices (SLs), are possible materials systems for implementation in future-generation infrared imaging systems. In addition to cutoff wavelengths spanning the infrared sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd79c7f51c27212182cc8adeec0818d
https://doi.org/10.1007/s11664-009-0757-8
https://doi.org/10.1007/s11664-009-0757-8
Autor:
C. Fulk, J. J. Siddiqui, P.Y. Emelie, S. Sivananthan, E. Cagin, Jamie Phillips, James W. Garland
Publikováno v:
Journal of Electronic Materials. 36:841-845
The electrical characteristics of organic (3,4-polyethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) contacts to HgCdTe are studied as a potential alternative to metal/HgCdTe contacts. The use of organic PEDOT:PSS contacts offers the potenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87dc4eb1a545ee34ef48a645fceb9197
https://doi.org/10.1007/s11664-007-0106-8
https://doi.org/10.1007/s11664-007-0106-8
Autor:
Silviu Velicu, James W. Garland, C. Fulk, S. Sivananthan, L. O. Bubulac, Paul Boieriu, John H. Dinan, Andrew J. Stoltz, C. H. Grein
Publikováno v:
Journal of Electronic Materials. 35:1385-1390
We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1119970d75bfc618b189e59769c8566
https://doi.org/10.1007/s11664-006-0272-0
https://doi.org/10.1007/s11664-006-0272-0
Publikováno v:
Journal of Crystal Growth. 277:78-84
A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness distributions of HgCdTe wafers grown by molecular beam epitaxy (MBE). This technique has the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f227c120a15a6a31a42f79f5cfbf84b1
https://doi.org/10.1016/j.jcrysgro.2005.01.051
https://doi.org/10.1016/j.jcrysgro.2005.01.051
Publikováno v:
Journal of Electronic Materials. 33:583-589
We study the adsorption of Hg on CdTe(211)B using an 88-wavelength spectroscopic ellipsometer mounted on a commercial, molecular beam epitaxy (MBE) chamber. A detailed analysis of the pseudo-dielectric function shows that Hg is present at the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b63e580e0544180e6ae04e412e4b5b
https://doi.org/10.1007/s11664-004-0050-9
https://doi.org/10.1007/s11664-004-0050-9
Publikováno v:
Journal of Crystal Growth. 258:374-379
We have grown numerous samples under Hg-deficient conditions, in order to study the formation of void defects. The surface morphology of all samples grown was characterized using optical and SEM microscopy. At the same time, the substrates were studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9bc3ccaa1b068946f3bd60dbee5a0be
https://doi.org/10.1016/s0022-0248(03)01559-8
https://doi.org/10.1016/s0022-0248(03)01559-8
Publikováno v:
Journal of Crystal Growth. 251:571-575
We examine the effects of surface preparation and window birefringence on the determination of Cd 965 Zn 035 Te temperatures, prior to the deposition of Hg 1− x Cd x Te alloys by molecular beam epitaxy. We find that the different surface morphologi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91bd4372ce9dadee90bf3da5f4c40ff
https://doi.org/10.1016/s0022-0248(02)02430-2
https://doi.org/10.1016/s0022-0248(02)02430-2
Publikováno v:
Journal of Electronic Materials. 28:789-792
The p-type doping of Hg1−xCdxTe (MCT) has proven to be a significant challenge in present day MCT-based detector technology. One of the most promising acceptor candidates, arsenic, behaves as an amphoteric dopant which can be activated as an accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::458379dbef81d0ff90bf13087621de4d
https://doi.org/10.1007/s11664-999-0071-5
https://doi.org/10.1007/s11664-999-0071-5
Publikováno v:
The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c63106475874bb06555d15e0e4128a
https://doi.org/10.1117/3.1002245.ch29
https://doi.org/10.1117/3.1002245.ch29
