Zobrazeno 1 - 10
of 17
pro vyhledávání: '"James V. Beach"'
Autor:
Brigitta M. Baugher, James H. Small, James V. Beach, Douglas A. Loy, Roger A. Assink, Joseph Tran, Kenneth J. Shea
Publikováno v:
Chemistry of Materials. 11:3333-3341
In this paper, we introduce a new approach for altering the properties of bridged polysilsesquioxane xerogels using postprocessing modification of the polymeric network. The bridging organic group ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee8f000dc3529dfdbfef1c8c7162fa9
https://doi.org/10.1021/cm990405m
https://doi.org/10.1021/cm990405m
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 34:1623-1627
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29ef850e18981e7ef64909b58d6238e
https://doi.org/10.1002/(sici)1099-0518(199606)34:8<1623::aid-pola30>3.0.co
https://doi.org/10.1002/(sici)1099-0518(199606)34:8<1623::aid-pola30>3.0.co
Publikováno v:
Proceedings of SPIE.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60617c82b51afaea2fc2b01c08dc96c
https://doi.org/10.1117/12.655318
https://doi.org/10.1117/12.655318
Autor:
Robert T. Greenway, John S. Petersen, Gregory P. Hughes, Lee H. Margolis, Mark John Maslow, Susan S. MacDonald, James V. Beach
Publikováno v:
Optical Microlithography XVIII.
CPL and aerial image mapping type contact designs for both negative and positive tones were created, built and tested for 100 nm and sub-100 nm contacts. Experimental results illustrated the need for electromagnetic-field corrections in the simulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda4313ec06e2a471281bd1ccc1089d3
https://doi.org/10.1117/12.598535
https://doi.org/10.1117/12.598535
Publikováno v:
SPIE Proceedings.
This study takes an integrated approach utilizing a combination of high NA 193 nm lithography, a sidewall chrome alternating aperture (SCAA) phase shift mask, optical proximity correction (OPC) and customized illumination in an attempt to demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e2a90762ebb5c330064f095061a9cb
https://doi.org/10.1117/12.485413
https://doi.org/10.1117/12.485413
Autor:
James V. Beach, John S. Petersen, Benjamin George Eynon, Dave J. Gerold, Mark John Maslow, Darren Taylor
Publikováno v:
SPIE Proceedings.
This study explores the capability of printing 100 nm contacts through the use of 9% and 15% attenuated phase shift masks and a 0.75 NA 193 nm scanner. The mask designs targeted simultaneous solutions for 100 nm contacts at pitches from 200 nm to 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69f82bff1cb966a8284ab5f5ff19017
https://doi.org/10.1117/12.467763
https://doi.org/10.1117/12.467763
Publikováno v:
SPIE Proceedings.
At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5240352bcf531bb38a27fe6d84bd3168
https://doi.org/10.1117/12.475664
https://doi.org/10.1117/12.475664
Autor:
Martha M. Rajaratnam, P. Holland, Kyle Spurlock, Chris Morris, Mark Riggs, Greg H. Baxter, John D. Zimmerman, Pedro Tasaico, James V. Beach
Publikováno v:
SPIE Proceedings.
We used the SVGL Micrascan 193 at International Sematech to evaluate four Sumitomo resists on four BARC products. The Sumitomo resists reviewed were PAR 710A35 and PAR 718A35 for dense lines, PAR 710A2 and PAR 722A3 for contact holes. We evaluated is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e58c43137e2bff16b2da300704efed
https://doi.org/10.1117/12.436907
https://doi.org/10.1117/12.436907
Autor:
Billy Nguyen, Patrick S. Lysaght, Theodore G. Doros, James V. Beach, Gennadi Bersuker, Joe Bennett, Tony Hare
Publikováno v:
Advances in Resist Technology and Processing XVII.
As design rules dip below 180 nm, DUV scanners are used at all critical levels with overlay requirements approaching 50 nm. Overlay specifications are typically 30% of critical dimension (CD), 45 nm maximum error for 1 50 nm geometries, but evennon-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41eafba9ec7fbfe9b0c064ae83405e8
https://doi.org/10.1117/12.388364
https://doi.org/10.1117/12.388364
Publikováno v:
Advances in Resist Technology and Processing XVII.
Photolithography is a key technology driver enabling next generation processes. As line widths decrease to 0.18 micrometer and below, the critical size of particulate contamination decreases proportionately. The implementation of filtration below 0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fc88c4c2c34735d40b686d45362958
https://doi.org/10.1117/12.388292
https://doi.org/10.1117/12.388292