Zobrazeno 1 - 10
of 21
pro vyhledávání: '"James T. Gibbon"'
Autor:
Max Birkett, Christopher N. Savory, Mohana K. Rajpalke, Wojciech M. Linhart, Thomas J. Whittles, James T. Gibbon, Adam W. Welch, Ivona Z. Mitrovic, Andriy Zakutayev, David O. Scanlon, Tim D. Veal
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 084904-084904-9 (2018)
The temperature-dependence of the band gap of the proposed photovoltaic absorber copper antimony sulphide (CuSbS2) has been studied by Fourier-transform infrared spectroscopy. The direct gap rises from 1.608 to 1.694 eV between 300 and 4.2 K. Below 2
Externí odkaz:
https://doaj.org/article/bdc6b5b86e2343759aad5fc399f67394
Autor:
Partha Pratim Das, Paul R. Chalker, Vinod R. Dhanak, Richard J. Potter, Teresa Partida Manzanera, Sung-Jin Cho, Rajat Mahapatra, Iain G. Thayne, James T. Gibbon, Leanne A. H. Jones, Ivona Z. Mitrovic, J.W. Roberts
Publikováno v:
ECS Transactions
GaN high electron mobility transistors (HEMTs) have been commercially available for over 10 years, however gate leakage limits their performance. The HEMT has the advantages of offering simple associated circuit design and fail-safe operation. Curren
Autor:
Matthew J. Rosseinsky, Vinod R. Dhanak, Marco Zanella, John B. Claridge, James T. Gibbon, Matthew S. Dyer, Troy D. Manning, Harry C. Sansom, Henry J. Snaith, Leonardo R. V. Buizza, Laura M. Herz, Michael J. Pitcher
A newly reported compound, CuAgBiI5, is synthesized as powder, crystals, and thin films. The structure consists of a 3D octahedral Ag+/Bi3+ network as in spinel, but occupancy of the tetrahedral interstitials by Cu+ differs from those in spinel. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f64c5d7a1a75b947764718fb16e94c0
https://doi.org/10.1021/acs.inorgchem.1c02773
https://doi.org/10.1021/acs.inorgchem.1c02773
Autor:
Harry C, Sansom, Leonardo R V, Buizza, Marco, Zanella, James T, Gibbon, Michael J, Pitcher, Matthew S, Dyer, Troy D, Manning, Vinod R, Dhanak, Laura M, Herz, Henry J, Snaith, John B, Claridge, Matthew J, Rosseinsky
Publikováno v:
Inorganic Chemistry
A newly reported compound, CuAgBiI5, is synthesized as powder, crystals, and thin films. The structure consists of a 3D octahedral Ag+/Bi3+ network as in spinel, but occupancy of the tetrahedral interstitials by Cu+ differs from those in spinel. The
Autor:
Philip A. E. Murgatroyd, James T. Gibbon, Peter J. Yates, Jonathan D. Major, Ken Durose, Christopher N. Savory, Richard J. Potter, David O. Scanlon, Thomas J. Whittles, Tim D. Veal, Max Birkett, Vinod R. Dhanak
Publikováno v:
ACS APPLIED MATERIALS & INTERFACES
The earth-abundant semiconductor Cu3BiS3 (CBS) exhibits promising photovoltaic properties and is often considered analogous to the solar absorbers copper indium gallium diselenide (CIGS) and copper...
Autor:
Partha Pratim Das, Vinod R. Dhanak, Leanne A. H. Jones, J.W. Roberts, Richard J. Potter, Rajat Mahapatra, Teresa Partida-Manzanera, James T. Gibbon, Paul R. Chalker, Sung-Jin Cho, Iain G. Thayne, Ivona Z. Mitrovic
Publikováno v:
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
A comprehensive study of the band alignments of TixAl1−xOy (with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1−xOy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c28c5fd07a5d341a6c8a74d480215c0
https://eprints.gla.ac.uk/221312/1/221312.pdf
https://eprints.gla.ac.uk/221312/1/221312.pdf
Autor:
Vin Dhanak, Devendra Tiwari, Guillaume Zoppi, Holly J. Edwards, Stephen A. Campbell, Yongtao Qu, James T. Gibbon, Vincent Barrioz, Neil Beattie
Publikováno v:
JOURNAL OF APPLIED PHYSICS
Alternative n-type buffer layer such as In 2 S 3 has been proposed as a Cd-free alternative in kesterite Cu 2 ZnSn ( S , Se ) 4 (CZTSSe) solar cells. In this study, optical and electronic characterization techniques together with device analysis and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c76f4b9965ee766f9a8601bc75f7d4b2
http://livrepository.liverpool.ac.uk/3128008/1/ICMAT2019AIParticle_revised.pdf
http://livrepository.liverpool.ac.uk/3128008/1/ICMAT2019AIParticle_revised.pdf
Autor:
J.W. Roberts, Vin Dhanak, Paul R. Chalker, Jon Major, B. Ding, Leanne A. H. Jones, James T. Gibbon, Rachel A. Oliver, Laurie J. Phillips, Fabien Massabuau
Publikováno v:
JOURNAL OF CRYSTAL GROWTH
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::531d06252992bd535887a28af39a08c0
https://strathprints.strath.ac.uk/70036/1/Roberts_etal_JCG2019_Low_temperature_growth_and_optical_properties_of_Ga2O3_deposited.pdf
https://strathprints.strath.ac.uk/70036/1/Roberts_etal_JCG2019_Low_temperature_growth_and_optical_properties_of_Ga2O3_deposited.pdf
Autor:
James T. Gibbon, Vin Dhanak, Raquel Garza-Hernández, Francisco S. Aguirre-Tostado, Holly J. Edwards, M.R. Alfaro-Cruz
Publikováno v:
JOURNAL OF ALLOYS AND COMPOUNDS
Cu2SnS3 (CTS) thin films were grown by spray pyrolysis using two synthetic routes: stoichiometric and substoichiometric in an aprotic media. The use of dimethyl sulfoxide (DMSO) as a solvent improved the solubility of metal chlorides at room temperat
Autor:
Steve Hall, Siti Nurbaya Supardan, Paul R. Chalker, Amit K. Chakraborty, Partha Pratim Das, Rajat Mahapatra, James T. Gibbon, Ken Durose, Ivona Z. Mitrovic, Vinod R. Dhanak, Robert E. Treharne, K. Sawangsri
Publikováno v:
Microelectronic Engineering
MICROELECTRONIC ENGINEERING
MICROELECTRONIC ENGINEERING
The band alignment of Ta2O5/GaN has been measured experimentally. The HCl cleaning has been found to be effective in removing oxygen from the GaN surface and was used prior to deposition of the Ta2O5 films by radio frequency magnetron sputtering. Var